High-power high-temperature operation of 0.98-/spl mu/m S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519360

M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, K. Uomi

引用次数: 2

Abstract

In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures.

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具有InGaAsP(例如:1.61 eV)势垒的0.98-/spl mu/m S-SQW激光器的高功率高温工作

本文系统地研究了带隙差为345 meV的InGaAsP(例如:1.61 eV)势垒在温度特性上的优势，并将其与传统的GaAs势垒进行了比较。具有InGaAsP势垒的激光器具有优异的温度特性，可以在高温下实现高功率工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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