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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Room temperature CW operation of GaInP/AlGaInP multiple quantum wire visible lasers (MQWR-LD) 室温连续工作GaInP/AlGaInP多量子线可见激光器(MQWR-LD)
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519140
J. Yoshida, K. Kishino
{"title":"Room temperature CW operation of GaInP/AlGaInP multiple quantum wire visible lasers (MQWR-LD)","authors":"J. Yoshida, K. Kishino","doi":"10.1109/ISLC.1994.519140","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519140","url":null,"abstract":"The first successful room temperature (r.t.) CW operation of GaInP/AlGaInP multiple quantum wire visible lasers was obtained, with the maximum CW temperature of 70/spl deg/C. For uncoated facet condition at 20/spl deg/C, the threshold current density (Jth) was 294 A/cm/sup 2/, the output power 50 mW/facet, and the differential quantum efficiency 37%. The low pulse Jth value of 277 A/cm/sup 2/ was obtained.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123535082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy 金属有机气相外延制备效率21%的垂直腔面发射激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519324
K. Lear, R. Schneider, K. Choquette, S. Kilcoyne, J. Figiel, J. Zolper
{"title":"Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy","authors":"K. Lear, R. Schneider, K. Choquette, S. Kilcoyne, J. Figiel, J. Zolper","doi":"10.1109/ISLC.1994.519324","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519324","url":null,"abstract":"We have demonstrated vertical-cavity top-surface-emitting InGaAs QW lasers by metalorganic vapor phase epitaxy that set record cw performance marks of 21% power conversion efficiency, 1.47 V threshold voltage, 23 mW output power, and 3.7 mW single-mode output power. The enhanced laser performance relies on novel mirror designs and benefits of metalorganic vapor phase epitaxy.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125411055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Limitations to controlling spontaneous emission in microcavities with distributed mirrors 用分布式反射镜控制微腔自发辐射的局限性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519143
Rajeev J Ram, D. Babic, R. York, J. Bowers
{"title":"Limitations to controlling spontaneous emission in microcavities with distributed mirrors","authors":"Rajeev J Ram, D. Babic, R. York, J. Bowers","doi":"10.1109/ISLC.1994.519143","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519143","url":null,"abstract":"Limitations introduced by diffraction penetration depth and mirror pass band on controlling spontaneous emission in planar and post microcavities are investigated. Analytic expressions for the emission rate and coupling factor are presented and verified by exact numerical calculations as well as millimeter wave experiments.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116586027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering 用于研究应变效应和GaInP超晶格有序的交叉耦合腔激光器(XCCL)
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519165
F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn
{"title":"GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering","authors":"F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn","doi":"10.1109/ISLC.1994.519165","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519165","url":null,"abstract":"Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129108634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear chirp compensation in high-power (>100 W) broad spectrum (/spl sim/20 nm) pulses from mode-locked AlGaAs lasers 锁模AlGaAs激光器大功率(>100 W)广谱(/spl sim/20 nm)脉冲非线性啁啾补偿
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519349
A. Azouz, N. Stelmakh, P. Langlois, J. Lourtioz, P. Gavrilovic
{"title":"Nonlinear chirp compensation in high-power (>100 W) broad spectrum (/spl sim/20 nm) pulses from mode-locked AlGaAs lasers","authors":"A. Azouz, N. Stelmakh, P. Langlois, J. Lourtioz, P. Gavrilovic","doi":"10.1109/ISLC.1994.519349","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519349","url":null,"abstract":"In this paper, we show that very broad pulse spectra (20 nm) can be effectively obtained by active/hybrid mode-locking of long-stripe (1 mm) high-power AlGaAs laser diodes, the spectral widths corresponding in principle to sub-100 fs pulses in the transform-limit situation. A novel technique is presented in order to analyze chirp non-linearities (i.e, high-order dispersion effects) in the laser pulses. Second- and third-order dispersion compensation is realized with an external compressor, leading to 160 fs pulses after compression with peak powers in excess of 100 W.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130598564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
295 mW CW maximum output of AlGaInP laser diode with windows grown on facets 在平面上生长窗口的AlGaInP激光二极管的295 mW连续波最大输出
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519358
M. Watanabe, K. Tani, K. Sasaki, H. Nakatsu, M. Hosoda, S. Matsui, O. Yamamoto, S. Yamamoto
{"title":"295 mW CW maximum output of AlGaInP laser diode with windows grown on facets","authors":"M. Watanabe, K. Tani, K. Sasaki, H. Nakatsu, M. Hosoda, S. Matsui, O. Yamamoto, S. Yamamoto","doi":"10.1109/ISLC.1994.519358","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519358","url":null,"abstract":"Up to 295 mW kink-free CW maximum output, about twice as much as the conventional one, was achieved by implementing the WGF (windows grown on facets) structure to AlGaInP laser diode.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121492008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gain-dependent polarization properties of vertical-cavity lasers 垂直腔激光器的增益依赖偏振特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519309
K. Choquette, K. Lear, R. Schneider, R. Leibenguth
{"title":"Gain-dependent polarization properties of vertical-cavity lasers","authors":"K. Choquette, K. Lear, R. Schneider, R. Leibenguth","doi":"10.1109/ISLC.1994.519309","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519309","url":null,"abstract":"We show that the power partitioning between orthogonal TE polarization states depends on their relative spectral alignment with the gain spectrum in VCSELs. A simple means of maintaining a dominant eigen polarization for all elements in a VCSEL array is described.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124535237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 241
12 GHz to 64 GHz continuous frequency tuning in selfpulsating 1.55 /spl mu/m quantum well DFB lasers 自脉动1.55 /spl mu/m量子阱DFB激光器的12 GHz至64 GHz连续频率调谐
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519346
U. Feiste, M. Mohrle, B. Sartorius, J. Horer, R. Loffler
{"title":"12 GHz to 64 GHz continuous frequency tuning in selfpulsating 1.55 /spl mu/m quantum well DFB lasers","authors":"U. Feiste, M. Mohrle, B. Sartorius, J. Horer, R. Loffler","doi":"10.1109/ISLC.1994.519346","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519346","url":null,"abstract":"Summary form only given. A record self pulsation frequency of 80 GHz and an extremely large continuous electrical frequency tuning range (12-64 GHz) for InGaAs QW lasers were achieved. Regarding the earlier shown locking feature, the devices enable the generation of all-optically synchronized pulse trains at high and variable frequencies.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126204179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Novel technique for fabricating nonabsorbing mirror laser 一种制造非吸收反射激光器的新技术
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519312
G. Lim, Jaeho Lee, Gueorugi Park, Taeil Kim
{"title":"Novel technique for fabricating nonabsorbing mirror laser","authors":"G. Lim, Jaeho Lee, Gueorugi Park, Taeil Kim","doi":"10.1109/ISLC.1994.519312","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519312","url":null,"abstract":"A nonabsorbing mirror for the AlGaAs/GaAs laser was achieved by the novel and simple method of laser treatment of the cleaved facets. No surface recombination effect at the facet was observed. The catastrophic optical damage (COD) level was tripled.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126228252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The S-bent waveguide distributed feedback laser s型弯曲波导分布反馈激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518917
J. Salzman, H. Olesen, A. Moller-Larsen, O. Albrektsen, J. Hanberg, J. Nørregaard, B. Tromborg
{"title":"The S-bent waveguide distributed feedback laser","authors":"J. Salzman, H. Olesen, A. Moller-Larsen, O. Albrektsen, J. Hanberg, J. Nørregaard, B. Tromborg","doi":"10.1109/ISLC.1994.518917","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518917","url":null,"abstract":"The authors analyzed the above threshold behaviour of pitch-modulated DFB cavities seeking optimum design for high power dynamic single-mode operation. Implementation of such lasers by S-bent waveguides is reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"20 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132532077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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