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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Tailored DFB laser properties by individually chirped gratings using bent waveguides 通过使用弯曲波导的单独啁啾光栅定制DFB激光特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518916
H. Hillmer, H. Zhu, S. Hansmann, A. Grabmaier, K. Magari, H. Burkhard
{"title":"Tailored DFB laser properties by individually chirped gratings using bent waveguides","authors":"H. Hillmer, H. Zhu, S. Hansmann, A. Grabmaier, K. Magari, H. Burkhard","doi":"10.1109/ISLC.1994.518916","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518916","url":null,"abstract":"DFB InGaAs/InAlGaAs lasers with quasi-continuously and arbitrarily chirped gratings of ultra-high spatial precision were realized by an economically interesting method using bent waveguides. Several application possibilities are discussed.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127571560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Hydrogen effect on 670 nm AlGaInP visible laser during high temperature operation 高温下670 nm AlGaInP可见光激光器的氢效应
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519152
W. Choi, Ji-Ho Chang, Won-Taek Choi, Seung-Hee Kim, Jongseok Kim, Shi-Jong Leem, T. Yoo
{"title":"Hydrogen effect on 670 nm AlGaInP visible laser during high temperature operation","authors":"W. Choi, Ji-Ho Chang, Won-Taek Choi, Seung-Hee Kim, Jongseok Kim, Shi-Jong Leem, T. Yoo","doi":"10.1109/ISLC.1994.519152","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519152","url":null,"abstract":"It has been shown that characteristics of AlGaInP lasers are improved after a short-term aging test. It is proposed based on SIMS measurement that this phenomenon is due to the redistribution of atomic hydrogens during the operation.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131259393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Variation of kink power with cavity length in weakly index guided semiconductor lasers 弱折射率半导体激光器扭结功率随腔长的变化
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519353
C. J. Poel, M. Schemmann, G. Acket
{"title":"Variation of kink power with cavity length in weakly index guided semiconductor lasers","authors":"C. J. Poel, M. Schemmann, G. Acket","doi":"10.1109/ISLC.1994.519353","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519353","url":null,"abstract":"A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 /spl mu/m are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High T/sub 0/ 1.3 /spl mu/m InGaAs strained single quantum well laser with InGaP wide band-gap clad layers 高T/sub 0/ 1.3 /spl mu/m InGaAs应变单量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518901
H. Kurakake, T. Uchida, K. Kubota, S. Ogita, H. Soda, S. Yamasaki
{"title":"High T/sub 0/ 1.3 /spl mu/m InGaAs strained single quantum well laser with InGaP wide band-gap clad layers","authors":"H. Kurakake, T. Uchida, K. Kubota, S. Ogita, H. Soda, S. Yamasaki","doi":"10.1109/ISLC.1994.518901","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518901","url":null,"abstract":"1.3 /spl mu/m laser simulation taking hot carriers into account indicated the effectiveness of wide band-gap clad layers for improving laser performance. Lasers fabricated with InGaP cladding layers based on these calculations exhibited the high T/sub 0/ of 100 K.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131263912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation 离子注入可饱和吸收区的InGaAsP/InP激光二极管被动锁模产生1.535 /spl mu/m高重复频率亚皮秒脉冲
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519157
A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm
{"title":"Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation","authors":"A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm","doi":"10.1109/ISLC.1994.519157","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519157","url":null,"abstract":"Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115116549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA) 电子可调谐，1w连续波，衍射限制单片喇叭放大器-主振荡器功率放大器(MFA-MOPA)
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519315
J. Osinski, K. Dzurko, J. Major, R. Parke, D. Welch
{"title":"Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)","authors":"J. Osinski, K. Dzurko, J. Major, R. Parke, D. Welch","doi":"10.1109/ISLC.1994.519315","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519315","url":null,"abstract":"Summary form only given. Free-carrier tuning of an InGaAs-AlGaAs master oscillator/power semiconductor laser amplifier is demonstrated, operating at 1 W CW. Approximately 20 mA of current tunes the device /spl sim/6 /spl Aring/ while maintaining near-diffraction-limited performance.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116358318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Clamped gain travelling wave semiconductor optical amplifier for wavelength division multiplexing applications 用于波分复用应用的箝位增益行波半导体光放大器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519326
P. Doussiere, A. Jourdan, G. Soulage, P. Garabédian, C. Graver, T. Fillion, E. Derouin, D. Leclerc
{"title":"Clamped gain travelling wave semiconductor optical amplifier for wavelength division multiplexing applications","authors":"P. Doussiere, A. Jourdan, G. Soulage, P. Garabédian, C. Graver, T. Fillion, E. Derouin, D. Leclerc","doi":"10.1109/ISLC.1994.519326","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519326","url":null,"abstract":"Summary form only given. In this paper, we report a new clamped gain InGaAsP semiconductor optical amplifier (CG SOA) structure with an integrated Bragg grating as a wavelength selective reflector and demonstrate crosstalk suppression in case of WDM application at 2.5 Gbit/s.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123497941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector 基于双折射金属/半导体偏振器端接分布式布拉格反射器的垂直腔面发射激光器偏振控制
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519325
T. Mukaihara, N. Ohnoki, Y. Hayashi, F. Koyama, K. Iga
{"title":"Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector","authors":"T. Mukaihara, N. Ohnoki, Y. Hayashi, F. Koyama, K. Iga","doi":"10.1109/ISLC.1994.519325","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519325","url":null,"abstract":"We propose a polarization controlled vertical-cavity surface-emitting laser (VCSEL) using a birefringent metal/semiconductor polarizer on a distributed Bragg reflector. Theoretically, we found that the proposed concept can provide an extremely large polarization selectivity at the resonant cavity wavelength by adjusting the phase condition between two polarization states. Experimentally, we have demonstrated a 0.98 /spl mu/m InGaAs/GaAs VCSEL with an Au/GaAs polarizer exhibiting a fairly good polarization control and maintaining low thresholds.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130040188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers 具有InGaAsP过渡层的无铝InGaAs/GaAs/InGaP应变量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519164
H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee
{"title":"Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers","authors":"H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee","doi":"10.1109/ISLC.1994.519164","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519164","url":null,"abstract":"Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130107251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power, mode-locked external-cavity tunable semiconductor laser 高功率、锁模外腔可调谐半导体激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518896
L. Goldberg, D. Mehuys, D. Welch
{"title":"High-power, mode-locked external-cavity tunable semiconductor laser","authors":"L. Goldberg, D. Mehuys, D. Welch","doi":"10.1109/ISLC.1994.518896","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518896","url":null,"abstract":"A novel, external-cavity tapered-contact laser is mode-locked using a narrow, single-stripe amplifier and emits up to 16 W peak power and 450 pJ pulse energy, in pulses as short as 12 ps.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"638 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122950461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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