弱折射率半导体激光器扭结功率随腔长的变化

C. J. Poel, M. Schemmann, G. Acket
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引用次数: 1

摘要

观察并解释了扭结功率对激光长度的周期性依赖。研究了AlGaAs、InGaAlP和InGaAlAs材料体系中的弱折射率制导高功率条纹激光器,发现周期在100 ~ 350 /spl mu/m之间。结果表明,锁相基模和一阶模在一定的激光长度下存在。这个新模型充分解释了扭结功率的振荡行为和前后镜侧面远场分布的相关变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Variation of kink power with cavity length in weakly index guided semiconductor lasers
A periodic dependence of kink power on laser length is observed and explained. Weakly-index guided high power stripe lasers in the AlGaAs, InGaAlP and InGaAlAs material systems are studied and periods of 100 to 350 /spl mu/m are found. The observations indicate that phase locked fundamental and first order modes exist at certain laser lengths. This new model fully explains the oscillatory behaviour of the kink power and the correlated changes in lateral far field distributions at the front and rear mirror facets.
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