H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee
{"title":"具有InGaAsP过渡层的无铝InGaAs/GaAs/InGaP应变量子阱激光器","authors":"H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee","doi":"10.1109/ISLC.1994.519164","DOIUrl":null,"url":null,"abstract":"Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers\",\"authors\":\"H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee\",\"doi\":\"10.1109/ISLC.1994.519164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers
Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.