J. Osinski, K. Dzurko, J. Major, R. Parke, D. Welch
{"title":"电子可调谐,1w连续波,衍射限制单片喇叭放大器-主振荡器功率放大器(MFA-MOPA)","authors":"J. Osinski, K. Dzurko, J. Major, R. Parke, D. Welch","doi":"10.1109/ISLC.1994.519315","DOIUrl":null,"url":null,"abstract":"Summary form only given. Free-carrier tuning of an InGaAs-AlGaAs master oscillator/power semiconductor laser amplifier is demonstrated, operating at 1 W CW. Approximately 20 mA of current tunes the device /spl sim/6 /spl Aring/ while maintaining near-diffraction-limited performance.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)\",\"authors\":\"J. Osinski, K. Dzurko, J. Major, R. Parke, D. Welch\",\"doi\":\"10.1109/ISLC.1994.519315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Free-carrier tuning of an InGaAs-AlGaAs master oscillator/power semiconductor laser amplifier is demonstrated, operating at 1 W CW. Approximately 20 mA of current tunes the device /spl sim/6 /spl Aring/ while maintaining near-diffraction-limited performance.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"196 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)
Summary form only given. Free-carrier tuning of an InGaAs-AlGaAs master oscillator/power semiconductor laser amplifier is demonstrated, operating at 1 W CW. Approximately 20 mA of current tunes the device /spl sim/6 /spl Aring/ while maintaining near-diffraction-limited performance.