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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers 超低阈值(0.56 mA) 1.35-/spl mu/m InGaAsP/InP压缩应变mqw激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518899
K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi
{"title":"Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers","authors":"K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi","doi":"10.1109/ISLC.1994.518899","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518899","url":null,"abstract":"Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"17 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens 具有单片集成微透镜的表面发射1.3 /spl mu/m SL-QW InGaAsP/InP脊波导激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519330
B. Stegmuller, H. Westermeier, H. Hedrich
{"title":"Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens","authors":"B. Stegmuller, H. Westermeier, H. Hedrich","doi":"10.1109/ISLC.1994.519330","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519330","url":null,"abstract":"1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115820249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A 室温连续波阈值电流165 /spl mu/A的应变层单量子阱InGaAs激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519170
T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv
{"title":"Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A","authors":"T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv","doi":"10.1109/ISLC.1994.519170","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519170","url":null,"abstract":"A record low threshold current 165 /spl mu/A (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast dynamics in waveguide saturable absorbers 波导可饱和吸收器的超快动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519162
A. Uskov, J. Karin, R. Nagarajan, J. Bowers, J. Mørk
{"title":"Ultrafast dynamics in waveguide saturable absorbers","authors":"A. Uskov, J. Karin, R. Nagarajan, J. Bowers, J. Mørk","doi":"10.1109/ISLC.1994.519162","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519162","url":null,"abstract":"Summary form only given. The results of a model of differential transmission measurements in GaAs-GaAlAs waveguide saturable absorbers indicate that high field effects, spectral hole burning and carrier heating are important mechanisms governing absorption dynamics.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122502659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design, characteristics and reliability of a large area surface emitting laser (SEL) for multimode data link applications 用于多模数据链路应用的大面积表面发射激光器(SEL)的设计、特性和可靠性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519322
M. Tan, K. H. Hahn, Y. Houng, S. Wang, A. T. Yuen, Tao Zhang, C. Lei
{"title":"Design, characteristics and reliability of a large area surface emitting laser (SEL) for multimode data link applications","authors":"M. Tan, K. H. Hahn, Y. Houng, S. Wang, A. T. Yuen, Tao Zhang, C. Lei","doi":"10.1109/ISLC.1994.519322","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519322","url":null,"abstract":"For short distance multimode data link systems, the large area surface emitting InGaAs QW laser with spectral width of up to 1 nm has been shown to operate in multimode links with RIN less than -120 dB/Hz. SELs have been specifically designed for this application. Modal properties, modal stabilities, efficiencies, reliability and details of the bottom emitting 980 nm SEL design will be discussed in this talk.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115161824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High temperature and high power operation of dual strained layer QW visible laser diodes 双应变层QW可见激光二极管的高温高功率工作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519332
A. Valster, C. van der Poel
{"title":"High temperature and high power operation of dual strained layer QW visible laser diodes","authors":"A. Valster, C. van der Poel","doi":"10.1109/ISLC.1994.519332","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519332","url":null,"abstract":"Summary form only given. Very reliable, high performance monolithic dual visible light emitting GaInP-AlInGaP QW laser diodes are described with 25 /spl mu/m centre to centre spacing. Record-low crosstalk of less than 3% at T=50/spl deg/C in the full output power range of 2-20 mW/channel is demonstrated. Crosstalk and droop are related, both theoretically and experimentally, to lasing wavelength, output power and device geometry.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127606986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer 具有GaAs/InGaP超晶格光约束层的0.98 /spl mu/m InGaAs/InGaP应变量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519172
M. Usami, Y. Matsushima
{"title":"0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer","authors":"M. Usami, Y. Matsushima","doi":"10.1109/ISLC.1994.519172","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519172","url":null,"abstract":"Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131770500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs 在偏振分集外差接收器 PIC 中集成可调谐 4 段 DBR 激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518904
R. Kaiser, F. Fidorra, D. Trommer, S. Malchow, P. Albrecht, D. Franke, H. Heidrich, W. Passenberg, H. Schroeter-Janssen, R. Stenzel, W. Rehbein
{"title":"Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs","authors":"R. Kaiser, F. Fidorra, D. Trommer, S. Malchow, P. Albrecht, D. Franke, H. Heidrich, W. Passenberg, H. Schroeter-Janssen, R. Stenzel, W. Rehbein","doi":"10.1109/ISLC.1994.518904","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518904","url":null,"abstract":"Polarization diversity heterodyne receiver PICs including a tunable 4-section DBR laser as a local oscillator have been successfully fabricated for the first time. PIC design and fabrication are described and characteristics of the integrated laser components are presented.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
6 GHz modulation of fiber coupled VCSEL arrays 光纤耦合VCSEL阵列的6ghz调制
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519321
E. Zeeb, B. Moller, G. Reiner, M. Ries, T. Hackbarth, K. Ebeling
{"title":"6 GHz modulation of fiber coupled VCSEL arrays","authors":"E. Zeeb, B. Moller, G. Reiner, M. Ries, T. Hackbarth, K. Ebeling","doi":"10.1109/ISLC.1994.519321","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519321","url":null,"abstract":"Summary form only given. Fiber coupling of independently addressable 4/spl times/8 vertical-cavity top-surface-emitting InGaAs quantum well laser diode arrays with coupling-efficiency above 70% is reported. Individual lasers show maximum output powers of 1.3 mW and electrical 3 dB modulation bandwidths up to 6 GHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114864947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition 采用选择性区金属有机化学气相沉积技术制备应变层InGaAs-GaAs埋置异质结构环形集成y耦合无源波导激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519331
T. Cockerill, M. Osowski, R. Lammert, J. Coleman
{"title":"A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition","authors":"T. Cockerill, M. Osowski, R. Lammert, J. Coleman","doi":"10.1109/ISLC.1994.519331","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519331","url":null,"abstract":"Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression /spl ges/24 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123098379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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