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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers 超低阈值(0.56 mA) 1.35-/spl mu/m InGaAsP/InP压缩应变mqw激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518899
K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi
{"title":"Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers","authors":"K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi","doi":"10.1109/ISLC.1994.518899","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518899","url":null,"abstract":"Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"17 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens 具有单片集成微透镜的表面发射1.3 /spl mu/m SL-QW InGaAsP/InP脊波导激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519330
B. Stegmuller, H. Westermeier, H. Hedrich
{"title":"Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens","authors":"B. Stegmuller, H. Westermeier, H. Hedrich","doi":"10.1109/ISLC.1994.519330","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519330","url":null,"abstract":"1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115820249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A 室温连续波阈值电流165 /spl mu/A的应变层单量子阱InGaAs激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519170
T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv
{"title":"Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A","authors":"T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv","doi":"10.1109/ISLC.1994.519170","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519170","url":null,"abstract":"A record low threshold current 165 /spl mu/A (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast dynamics in waveguide saturable absorbers 波导可饱和吸收器的超快动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519162
A. Uskov, J. Karin, R. Nagarajan, J. Bowers, J. Mørk
{"title":"Ultrafast dynamics in waveguide saturable absorbers","authors":"A. Uskov, J. Karin, R. Nagarajan, J. Bowers, J. Mørk","doi":"10.1109/ISLC.1994.519162","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519162","url":null,"abstract":"Summary form only given. The results of a model of differential transmission measurements in GaAs-GaAlAs waveguide saturable absorbers indicate that high field effects, spectral hole burning and carrier heating are important mechanisms governing absorption dynamics.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122502659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design, characteristics and reliability of a large area surface emitting laser (SEL) for multimode data link applications 用于多模数据链路应用的大面积表面发射激光器(SEL)的设计、特性和可靠性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519322
M. Tan, K. H. Hahn, Y. Houng, S. Wang, A. T. Yuen, Tao Zhang, C. Lei
{"title":"Design, characteristics and reliability of a large area surface emitting laser (SEL) for multimode data link applications","authors":"M. Tan, K. H. Hahn, Y. Houng, S. Wang, A. T. Yuen, Tao Zhang, C. Lei","doi":"10.1109/ISLC.1994.519322","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519322","url":null,"abstract":"For short distance multimode data link systems, the large area surface emitting InGaAs QW laser with spectral width of up to 1 nm has been shown to operate in multimode links with RIN less than -120 dB/Hz. SELs have been specifically designed for this application. Modal properties, modal stabilities, efficiencies, reliability and details of the bottom emitting 980 nm SEL design will be discussed in this talk.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115161824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High temperature and high power operation of dual strained layer QW visible laser diodes 双应变层QW可见激光二极管的高温高功率工作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519332
A. Valster, C. van der Poel
{"title":"High temperature and high power operation of dual strained layer QW visible laser diodes","authors":"A. Valster, C. van der Poel","doi":"10.1109/ISLC.1994.519332","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519332","url":null,"abstract":"Summary form only given. Very reliable, high performance monolithic dual visible light emitting GaInP-AlInGaP QW laser diodes are described with 25 /spl mu/m centre to centre spacing. Record-low crosstalk of less than 3% at T=50/spl deg/C in the full output power range of 2-20 mW/channel is demonstrated. Crosstalk and droop are related, both theoretically and experimentally, to lasing wavelength, output power and device geometry.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127606986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer 具有GaAs/InGaP超晶格光约束层的0.98 /spl mu/m InGaAs/InGaP应变量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519172
M. Usami, Y. Matsushima
{"title":"0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer","authors":"M. Usami, Y. Matsushima","doi":"10.1109/ISLC.1994.519172","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519172","url":null,"abstract":"Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131770500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs 在偏振分集外差接收器 PIC 中集成可调谐 4 段 DBR 激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518904
R. Kaiser, F. Fidorra, D. Trommer, S. Malchow, P. Albrecht, D. Franke, H. Heidrich, W. Passenberg, H. Schroeter-Janssen, R. Stenzel, W. Rehbein
{"title":"Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs","authors":"R. Kaiser, F. Fidorra, D. Trommer, S. Malchow, P. Albrecht, D. Franke, H. Heidrich, W. Passenberg, H. Schroeter-Janssen, R. Stenzel, W. Rehbein","doi":"10.1109/ISLC.1994.518904","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518904","url":null,"abstract":"Polarization diversity heterodyne receiver PICs including a tunable 4-section DBR laser as a local oscillator have been successfully fabricated for the first time. PIC design and fabrication are described and characteristics of the integrated laser components are presented.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical feedback phenomena in semiconductor lasers 半导体激光器中的光反馈现象
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518894
K. Petermann
{"title":"Optical feedback phenomena in semiconductor lasers","authors":"K. Petermann","doi":"10.1109/ISLC.1994.518894","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518894","url":null,"abstract":"Optical feedback phenomena in semiconductor lasers attracted considerable interest during the last decade. It has been recognized quite early, that the linewidth can be reduced considerably with optical feedback and external cavity lasers are routinely used if linewidths down to a few kHz are required. However, optical feedback phenomena have been found to be responsible also for mode hopping, for strong excess noise in the coherence collapse regime and other regimes have been identified with stable microwave oscillations.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
2.5 Gb/s parallel transmission without excess bit error rate in a 1.3 /spl mu/m strained MQW LD array for optical interconnection 在1.3 /spl mu/m应变MQW LD阵列中实现无多余误码率的2.5 Gb/s并行传输
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519167
K. Matsumoto, Y. Miyazaki, E. Ishimura, H. Nishiguchi, T. Shiba, K. Goto, A. Takemoto, E. Omura, M. Aiga, M. Otsubo
{"title":"2.5 Gb/s parallel transmission without excess bit error rate in a 1.3 /spl mu/m strained MQW LD array for optical interconnection","authors":"K. Matsumoto, Y. Miyazaki, E. Ishimura, H. Nishiguchi, T. Shiba, K. Goto, A. Takemoto, E. Omura, M. Aiga, M. Otsubo","doi":"10.1109/ISLC.1994.519167","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519167","url":null,"abstract":"Summary form only given. 2.5 Gb/s parallel transmission has been successfully demonstrated using a 1.3 /spl mu/m strained MQW 10-element LD array. It is shown that the electrical crosstalk between neighboring LD's should be suppressed less than -20 dB at 2.5 GHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132835886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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