0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

Abstract

Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.