Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519330

B. Stegmuller, H. Westermeier, H. Hedrich

引用次数: 1

Abstract

1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.

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具有单片集成微透镜的表面发射1.3 /spl mu/m SL-QW InGaAsP/InP脊波导激光二极管

制备了1.3 /spl μ m应变层(SL)量子阱(QW) InGaAsP-InP脊波导(RWG)单片集成微透镜DFB激光二极管。在25/spl度/C下，使用45/spl度/内部偏转器实现了27 mA的cw阈值电流和垂直于InP衬底的10 mW cw发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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