Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518899

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi

引用次数: 3

Abstract

Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.

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超低阈值(0.56 mA) 1.35-/spl mu/m InGaAsP/InP压缩应变mqw激光器

在室温下，在1.35-/spl μ m InGaAsP/InP应变mqw激光器中获得了0.56 mA(脉冲)和0.58 mA(连续)的极低阈值电流。这些值是长波激光器报道过的最低值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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