{"title":"具有单片集成微透镜的表面发射1.3 /spl mu/m SL-QW InGaAsP/InP脊波导激光二极管","authors":"B. Stegmuller, H. Westermeier, H. Hedrich","doi":"10.1109/ISLC.1994.519330","DOIUrl":null,"url":null,"abstract":"1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Surface emitting 1.3 /spl mu/m SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens\",\"authors\":\"B. Stegmuller, H. Westermeier, H. Hedrich\",\"doi\":\"10.1109/ISLC.1994.519330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.3 /spl mu/m strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25/spl deg/C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45/spl deg/ internal deflector.
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