双应变层QW可见激光二极管的高温高功率工作

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519332

A. Valster, C. van der Poel

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引用次数: 1

摘要

只提供摘要形式。非常可靠，高性能单片双可见发光GaInP-AlInGaP QW激光二极管的中心间距为25 /spl mu/m。在T=50/声压度/C时，在2-20 mW/通道的全输出功率范围内，串扰低于3%。串扰和下垂在理论上和实验上都与激光波长、输出功率和器件几何形状有关。

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High temperature and high power operation of dual strained layer QW visible laser diodes

Summary form only given. Very reliable, high performance monolithic dual visible light emitting GaInP-AlInGaP QW laser diodes are described with 25 /spl mu/m centre to centre spacing. Record-low crosstalk of less than 3% at T=50/spl deg/C in the full output power range of 2-20 mW/channel is demonstrated. Crosstalk and droop are related, both theoretically and experimentally, to lasing wavelength, output power and device geometry.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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