Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519170

T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv

引用次数: 0

Abstract

A record low threshold current 165 /spl mu/A (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings.

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室温连续波阈值电流165 /spl mu/A的应变层单量子阱InGaAs激光器

利用短腔长、高反射率涂层的埋置异质结构应变层单量子阱InGaAs激光器，在室温下获得了创纪录的低阈值电流165 /spl μ A (CW)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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