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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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1.3 /spl mu/m strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission 1.3 /spl mu/m应变MQW-DFB激光器，具有极低的互调失真，用于1.9 GHz模拟传输
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519341
H. Watanabe, T. Aoyagi, A. Takemoto, T. Takiguchi, H. Tada, K. Isshiki, E. Omura
{"title":"1.3 /spl mu/m strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission","authors":"H. Watanabe, T. Aoyagi, A. Takemoto, T. Takiguchi, H. Tada, K. Isshiki, E. Omura","doi":"10.1109/ISLC.1994.519341","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519341","url":null,"abstract":"The third order intermodulation distortion as low as -88 dBc is achieved at high frequency of 1.9 GHz in 1.3 /spl mu/m strained MQW-DFB InGaAsP lasers fabricated by all-MOCVD growth technique. High CNR over 80 dB is also realized.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114900182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High speed all-optical functional elements using injection locked semiconductor lasers 高速全光功能元件的注入锁定半导体激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519163
J. Horer, K. Weich, M. Mohrle, E. Patzak, B. Sartorius
{"title":"High speed all-optical functional elements using injection locked semiconductor lasers","authors":"J. Horer, K. Weich, M. Mohrle, E. Patzak, B. Sartorius","doi":"10.1109/ISLC.1994.519163","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519163","url":null,"abstract":"Summary form only given. The speed of all-optical switching using injection locked lasers is analyzed. A model describing two-section lasers is developed yielding a speed above 20 Gb/s. The function of a decision unit is experimentally demonstrated at 10 Gb/s.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117043866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
6 GHz modulation of fiber coupled VCSEL arrays 光纤耦合VCSEL阵列的6ghz调制
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519321
E. Zeeb, B. Moller, G. Reiner, M. Ries, T. Hackbarth, K. Ebeling
{"title":"6 GHz modulation of fiber coupled VCSEL arrays","authors":"E. Zeeb, B. Moller, G. Reiner, M. Ries, T. Hackbarth, K. Ebeling","doi":"10.1109/ISLC.1994.519321","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519321","url":null,"abstract":"Summary form only given. Fiber coupling of independently addressable 4/spl times/8 vertical-cavity top-surface-emitting InGaAs quantum well laser diode arrays with coupling-efficiency above 70% is reported. Individual lasers show maximum output powers of 1.3 mW and electrical 3 dB modulation bandwidths up to 6 GHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114864947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis on tuning range of enhanced-plasma-effect lasers 增强等离子体效应激光器调谐范围分析
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519146
M. Morinaga, M. Ishikawa, N. Suzuki
{"title":"Analysis on tuning range of enhanced-plasma-effect lasers","authors":"M. Morinaga, M. Ishikawa, N. Suzuki","doi":"10.1109/ISLC.1994.519146","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519146","url":null,"abstract":"The authors show wide and rapid tuning characteristics of the Enhanced-Plasma-Effect (EPE) lasers, which are new frequency tunable lasers having a thick carrier reservoir. Using the EPE lasers, continuous tuning range of more than 10 nm is predicted.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122037729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization induced enhancement of relative intensity noise and modulation distortion in vertical cavity surface emitting lasers 垂直腔面发射激光器中极化诱导的相对强度增强、噪声和调制畸变
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519176
M.S. Wu, L. Buckman, G.S. Li, K. Lau, C. Chang-Hasnain
{"title":"Polarization induced enhancement of relative intensity noise and modulation distortion in vertical cavity surface emitting lasers","authors":"M.S. Wu, L. Buckman, G.S. Li, K. Lau, C. Chang-Hasnain","doi":"10.1109/ISLC.1994.519176","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519176","url":null,"abstract":"Due to the lack of polarization control in proton-implanted vertical cavity surface emitting lasers, increased relative intensity noise and pulse distortion are observed when the laser is modulated and a single polarization direction is selected.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123635721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Temperature dependent efficiency and modulation characteristics of Al-free 980 nm laser diodes 无铝980 nm激光二极管的温度依赖性效率和调制特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519156
R. Nabiev, E. Vail, C. Chang-Hasnain
{"title":"Temperature dependent efficiency and modulation characteristics of Al-free 980 nm laser diodes","authors":"R. Nabiev, E. Vail, C. Chang-Hasnain","doi":"10.1109/ISLC.1994.519156","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519156","url":null,"abstract":"Summary form only given. Temperature dependent efficiency and modulation characteristics of QW laser diodes of various design are analyzed using self-consistent carrier transport analysis including stimulated emission.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"86 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD 利用氯化物辅助MOCVD选择性生长埋有AlGaAs约束层的0.78-0.98 /spl μ m脊波导激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519169
A. Shima, A. Takemoto, H. Kizuki, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, E. Omura, M. Otsubo
{"title":"0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD","authors":"A. Shima, A. Takemoto, H. Kizuki, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, E. Omura, M. Otsubo","doi":"10.1109/ISLC.1994.519169","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519169","url":null,"abstract":"Ridge-waveguide laser diodes (LD's) buried with an Al/sub 0.7/Ga/sub 0.3/As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121924370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Generation of 1.54 THz pulse train by harmonic passive mode-locking in DBR lasers DBR激光器中谐波无源锁模产生1.54 THz脉冲串
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518895
S. Arahira, S. Oshiba, T. Kunii, Y. Matsui, Y. Ogawa
{"title":"Generation of 1.54 THz pulse train by harmonic passive mode-locking in DBR lasers","authors":"S. Arahira, S. Oshiba, T. Kunii, Y. Matsui, Y. Ogawa","doi":"10.1109/ISLC.1994.518895","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518895","url":null,"abstract":"We report on the first demonstration of THz-rate pulse generation by harmonic passive mode-locking in DBR lasers. The mechanism of stable generation of harmonic pulses is discussed concerning the spectral filtering property of the Bragg reflector.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124456692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers 利用GaInAsP阱层研究应变多量子阱AlGaInP可见激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519337
A. Furuya, C. Anayama, M. Kondo, Y. Kito, M. Sugano, H. Sudo, K. Domen, T. Tanahashi
{"title":"Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers","authors":"A. Furuya, C. Anayama, M. Kondo, Y. Kito, M. Sugano, H. Sudo, K. Domen, T. Tanahashi","doi":"10.1109/ISLC.1994.519337","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519337","url":null,"abstract":"Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15/spl deg/C-50/spl deg/C) and 120 K (60/spl deg/C-90/spl deg/C) in optimized laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130419839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency visible single mode laser diodes 高效可见单模激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519154
R. Geels, W. E. Plano, D. Welch
{"title":"High efficiency visible single mode laser diodes","authors":"R. Geels, W. E. Plano, D. Welch","doi":"10.1109/ISLC.1994.519154","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519154","url":null,"abstract":"We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"6 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129293290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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