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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Generation of 1.54 THz pulse train by harmonic passive mode-locking in DBR lasers DBR激光器中谐波无源锁模产生1.54 THz脉冲串
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518895
S. Arahira, S. Oshiba, T. Kunii, Y. Matsui, Y. Ogawa
{"title":"Generation of 1.54 THz pulse train by harmonic passive mode-locking in DBR lasers","authors":"S. Arahira, S. Oshiba, T. Kunii, Y. Matsui, Y. Ogawa","doi":"10.1109/ISLC.1994.518895","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518895","url":null,"abstract":"We report on the first demonstration of THz-rate pulse generation by harmonic passive mode-locking in DBR lasers. The mechanism of stable generation of harmonic pulses is discussed concerning the spectral filtering property of the Bragg reflector.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124456692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Polarization induced enhancement of relative intensity noise and modulation distortion in vertical cavity surface emitting lasers 垂直腔面发射激光器中极化诱导的相对强度增强、噪声和调制畸变
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519176
M.S. Wu, L. Buckman, G.S. Li, K. Lau, C. Chang-Hasnain
{"title":"Polarization induced enhancement of relative intensity noise and modulation distortion in vertical cavity surface emitting lasers","authors":"M.S. Wu, L. Buckman, G.S. Li, K. Lau, C. Chang-Hasnain","doi":"10.1109/ISLC.1994.519176","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519176","url":null,"abstract":"Due to the lack of polarization control in proton-implanted vertical cavity surface emitting lasers, increased relative intensity noise and pulse distortion are observed when the laser is modulated and a single polarization direction is selected.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123635721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Analysis on tuning range of enhanced-plasma-effect lasers 增强等离子体效应激光器调谐范围分析
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519146
M. Morinaga, M. Ishikawa, N. Suzuki
{"title":"Analysis on tuning range of enhanced-plasma-effect lasers","authors":"M. Morinaga, M. Ishikawa, N. Suzuki","doi":"10.1109/ISLC.1994.519146","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519146","url":null,"abstract":"The authors show wide and rapid tuning characteristics of the Enhanced-Plasma-Effect (EPE) lasers, which are new frequency tunable lasers having a thick carrier reservoir. Using the EPE lasers, continuous tuning range of more than 10 nm is predicted.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122037729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE 选择性面积MOVPE生长的低啁啾集成ea调制器/DFB激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518910
J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht
{"title":"Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE","authors":"J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht","doi":"10.1109/ISLC.1994.518910","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518910","url":null,"abstract":"Summary form only given. 2.5 Gbit/s transmission over 517 km of standard fiber is reported using a monolithically integrated InGaAsP MQW EA modulator/DFB laser by selective-area MOVPE. A low chirp of 0.13 /spl Aring/ peak-peak and good reliability are shown.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126336975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
High efficiency visible single mode laser diodes 高效可见单模激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519154
R. Geels, W. E. Plano, D. Welch
{"title":"High efficiency visible single mode laser diodes","authors":"R. Geels, W. E. Plano, D. Welch","doi":"10.1109/ISLC.1994.519154","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519154","url":null,"abstract":"We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"6 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129293290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD 利用氯化物辅助MOCVD选择性生长埋有AlGaAs约束层的0.78-0.98 /spl μ m脊波导激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519169
A. Shima, A. Takemoto, H. Kizuki, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, E. Omura, M. Otsubo
{"title":"0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD","authors":"A. Shima, A. Takemoto, H. Kizuki, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, E. Omura, M. Otsubo","doi":"10.1109/ISLC.1994.519169","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519169","url":null,"abstract":"Ridge-waveguide laser diodes (LD's) buried with an Al/sub 0.7/Ga/sub 0.3/As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121924370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependent efficiency and modulation characteristics of Al-free 980 nm laser diodes 无铝980 nm激光二极管的温度依赖性效率和调制特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519156
R. Nabiev, E. Vail, C. Chang-Hasnain
{"title":"Temperature dependent efficiency and modulation characteristics of Al-free 980 nm laser diodes","authors":"R. Nabiev, E. Vail, C. Chang-Hasnain","doi":"10.1109/ISLC.1994.519156","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519156","url":null,"abstract":"Summary form only given. Temperature dependent efficiency and modulation characteristics of QW laser diodes of various design are analyzed using self-consistent carrier transport analysis including stimulated emission.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"86 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits 用于光子集成电路的激光二极管与聚合物波导的单片集成
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519150
N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer
{"title":"Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits","authors":"N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer","doi":"10.1109/ISLC.1994.519150","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519150","url":null,"abstract":"Summary form only given. In this paper a monolithic integration of a laser diode with a polymeric based waveguide is reported as a first step in developing a monolithically integrated multi-wavelength DFB laser array with a passive polymeric optical power combiner. This alternative approach based on polymeric materials offers the advantages of potentially low optical losses and high and easy processability; and the capability of preparation of active and passive components on Ill-V wafers with already processed devices.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125277762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Arrays of red VCSELs with partial top dielectric stack DBRs 带有部分顶部介电堆dbr的红色vcsel阵列
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519320
J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette
{"title":"Arrays of red VCSELs with partial top dielectric stack DBRs","authors":"J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette","doi":"10.1109/ISLC.1994.519320","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519320","url":null,"abstract":"Summary form only given. We report arrays (1/spl times/64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at /spl lambda//sub 0/-660 nm for 15 /spl mu/m diameter devices with threshold currents below 2 mA.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127583962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modulation characteristics of short cavity distributed Bragg reflection lasers with a narrow band Bragg mirror 窄带布拉格反射镜短腔分布布拉格反射激光器的调制特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519344
N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus
{"title":"Modulation characteristics of short cavity distributed Bragg reflection lasers with a narrow band Bragg mirror","authors":"N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus","doi":"10.1109/ISLC.1994.519344","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519344","url":null,"abstract":"Summary form only given. We describe small and large signal modulation characteristics of distributed Bragg reflection lasers with a Bragg reflection bandwidth narrower than the cavity mode spacing.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127383012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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