高效可见单模激光二极管

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519154

R. Geels, W. E. Plano, D. Welch

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引用次数: 2

摘要

我们报道了低阈值和高效率的660 nm波段单模InGaP QW激光二极管。阈值电流低至13毫安。外微分量子效率大于80%的报道。

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High efficiency visible single mode laser diodes

We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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