N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer
{"title":"Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits","authors":"N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer","doi":"10.1109/ISLC.1994.519150","DOIUrl":null,"url":null,"abstract":"Summary form only given. In this paper a monolithic integration of a laser diode with a polymeric based waveguide is reported as a first step in developing a monolithically integrated multi-wavelength DFB laser array with a passive polymeric optical power combiner. This alternative approach based on polymeric materials offers the advantages of potentially low optical losses and high and easy processability; and the capability of preparation of active and passive components on Ill-V wafers with already processed devices.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. In this paper a monolithic integration of a laser diode with a polymeric based waveguide is reported as a first step in developing a monolithically integrated multi-wavelength DFB laser array with a passive polymeric optical power combiner. This alternative approach based on polymeric materials offers the advantages of potentially low optical losses and high and easy processability; and the capability of preparation of active and passive components on Ill-V wafers with already processed devices.