利用氯化物辅助MOCVD选择性生长埋有AlGaAs约束层的0.78-0.98 /spl μ m脊波导激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519169

A. Shima, A. Takemoto, H. Kizuki, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, E. Omura, M. Otsubo

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引用次数: 1

摘要

利用cl辅助MOCVD选择性生长Al/sub 0.7/Ga/sub 0.3/As约束层的脊波导激光二极管首次实现了工作电流的减小、横向模式的稳定和高功率工作的可靠性。

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0.78-0.98 /spl mu/m ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD

Ridge-waveguide laser diodes (LD's) buried with an Al/sub 0.7/Ga/sub 0.3/As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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