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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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1.3 /spl mu/m strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission 1.3 /spl mu/m应变MQW-DFB激光器，具有极低的互调失真，用于1.9 GHz模拟传输
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519341
H. Watanabe, T. Aoyagi, A. Takemoto, T. Takiguchi, H. Tada, K. Isshiki, E. Omura
{"title":"1.3 /spl mu/m strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission","authors":"H. Watanabe, T. Aoyagi, A. Takemoto, T. Takiguchi, H. Tada, K. Isshiki, E. Omura","doi":"10.1109/ISLC.1994.519341","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519341","url":null,"abstract":"The third order intermodulation distortion as low as -88 dBc is achieved at high frequency of 1.9 GHz in 1.3 /spl mu/m strained MQW-DFB InGaAsP lasers fabricated by all-MOCVD growth technique. High CNR over 80 dB is also realized.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114900182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers 利用GaInAsP阱层研究应变多量子阱AlGaInP可见激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519337
A. Furuya, C. Anayama, M. Kondo, Y. Kito, M. Sugano, H. Sudo, K. Domen, T. Tanahashi
{"title":"Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers","authors":"A. Furuya, C. Anayama, M. Kondo, Y. Kito, M. Sugano, H. Sudo, K. Domen, T. Tanahashi","doi":"10.1109/ISLC.1994.519337","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519337","url":null,"abstract":"Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15/spl deg/C-50/spl deg/C) and 120 K (60/spl deg/C-90/spl deg/C) in optimized laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130419839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High speed all-optical functional elements using injection locked semiconductor lasers 高速全光功能元件的注入锁定半导体激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519163
J. Horer, K. Weich, M. Mohrle, E. Patzak, B. Sartorius
{"title":"High speed all-optical functional elements using injection locked semiconductor lasers","authors":"J. Horer, K. Weich, M. Mohrle, E. Patzak, B. Sartorius","doi":"10.1109/ISLC.1994.519163","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519163","url":null,"abstract":"Summary form only given. The speed of all-optical switching using injection locked lasers is analyzed. A model describing two-section lasers is developed yielding a speed above 20 Gb/s. The function of a decision unit is experimentally demonstrated at 10 Gb/s.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117043866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
132 W monolithic two-dimensional surface emitting laser arrays 132w单片二维面发射激光器阵列
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519363
D. Nam, S. Sanders, R. Waarts, D. Welch
{"title":"132 W monolithic two-dimensional surface emitting laser arrays","authors":"D. Nam, S. Sanders, R. Waarts, D. Welch","doi":"10.1109/ISLC.1994.519363","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519363","url":null,"abstract":"We have demonstrated output powers of 3.4 W CW and 132 W Q-CW from a single element and a monolithic 4/spl times/12 element surface emitting InGaAs-AlGaAs QW lasers with ion milled 45/spl deg/ and 90/spl deg/ facets, respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132533844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2.5 Gb/s parallel transmission without excess bit error rate in a 1.3 /spl mu/m strained MQW LD array for optical interconnection 在1.3 /spl mu/m应变MQW LD阵列中实现无多余误码率的2.5 Gb/s并行传输
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519167
K. Matsumoto, Y. Miyazaki, E. Ishimura, H. Nishiguchi, T. Shiba, K. Goto, A. Takemoto, E. Omura, M. Aiga, M. Otsubo
{"title":"2.5 Gb/s parallel transmission without excess bit error rate in a 1.3 /spl mu/m strained MQW LD array for optical interconnection","authors":"K. Matsumoto, Y. Miyazaki, E. Ishimura, H. Nishiguchi, T. Shiba, K. Goto, A. Takemoto, E. Omura, M. Aiga, M. Otsubo","doi":"10.1109/ISLC.1994.519167","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519167","url":null,"abstract":"Summary form only given. 2.5 Gb/s parallel transmission has been successfully demonstrated using a 1.3 /spl mu/m strained MQW 10-element LD array. It is shown that the electrical crosstalk between neighboring LD's should be suppressed less than -20 dB at 2.5 GHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132835886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Optical feedback phenomena in semiconductor lasers 半导体激光器中的光反馈现象
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518894
K. Petermann
{"title":"Optical feedback phenomena in semiconductor lasers","authors":"K. Petermann","doi":"10.1109/ISLC.1994.518894","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518894","url":null,"abstract":"Optical feedback phenomena in semiconductor lasers attracted considerable interest during the last decade. It has been recognized quite early, that the linewidth can be reduced considerably with optical feedback and external cavity lasers are routinely used if linewidths down to a few kHz are required. However, optical feedback phenomena have been found to be responsible also for mode hopping, for strong excess noise in the coherence collapse regime and other regimes have been identified with stable microwave oscillations.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133164652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE 窄脊波导0.98-/spl mu/m InGaAs/AlGaAs应变量子阱激光器的高功率单横模操作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519317
H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa
{"title":"High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE","authors":"H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa","doi":"10.1109/ISLC.1994.519317","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519317","url":null,"abstract":"Narrow ridge waveguide 0.98-/spl mu/m InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115203349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel method to optimize complex coupling coefficients by sampled gratings 利用采样光栅优化复杂耦合系数的新方法
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519318
S. Hansmann, H. Walter, H. Hillmer, H. Burkhard
{"title":"Novel method to optimize complex coupling coefficients by sampled gratings","authors":"S. Hansmann, H. Walter, H. Hillmer, H. Burkhard","doi":"10.1109/ISLC.1994.519318","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519318","url":null,"abstract":"Summary form only given. We propose and demonstrate the application of sampled gratings for the variation of the coupling coefficient on a single wafer. Using this method the influence of the coupling strength on the performance of gain-coupled InGaAs-InGaAlAs DFB lasers is studied.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114242460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier 具有多量子势垒的1.55 /spl μ m应变GaInAs/AlGaInAs MQW激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518902
H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa
{"title":"1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier","authors":"H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa","doi":"10.1109/ISLC.1994.518902","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518902","url":null,"abstract":"The authors have fabricated 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Blue-green laser diodes 蓝绿色激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518893
A. Ishibashi
{"title":"Blue-green laser diodes","authors":"A. Ishibashi","doi":"10.1109/ISLC.1994.518893","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518893","url":null,"abstract":"Semiconductor laser diodes (LDs) have been playing a central role in many systems, such as high transmission-rate communication systems, high power energy source systems, and optical or magneto-optical memory systems, e.g.,consumer audio Compact Disc (CD) ROM systems, Mini-Disc (MD) ROM/RAM systems with AlGaAs infra-red LDs, and high definition MUSE disk systems with AlGaInP red-emitting LDs. The research and development, or the evolution, of the semiconductor LDs will be twofold. One is to integrate the conventional LDs, which have already been established as a discrete chip, into monolithic highly-functional devices. The AlGaAs/GaAs-based LDs have been in this phase. The other is to establish a discrete chip that achieves challenging targets, such as a super high power, an extremely rapid response, and a short wavelength. As the next generation of conventional LDs, the short wavelength, green and blue, LDs have been needed for higher density disk systems. It is straight forward that the shorter the wavelength becomes, the higher the density of those optical disks can be, leading to either a long time or a high definition recording. Furthermore, with the green and the blue LDs we are entering a new paradigm where RGB full-color all-solid-state light-sources are at hand in an inexpensive, mass productive, and highly compact manner.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1901 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 117
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