N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer
{"title":"Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits","authors":"N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer","doi":"10.1109/ISLC.1994.519150","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519150","url":null,"abstract":"Summary form only given. In this paper a monolithic integration of a laser diode with a polymeric based waveguide is reported as a first step in developing a monolithically integrated multi-wavelength DFB laser array with a passive polymeric optical power combiner. This alternative approach based on polymeric materials offers the advantages of potentially low optical losses and high and easy processability; and the capability of preparation of active and passive components on Ill-V wafers with already processed devices.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125277762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht
{"title":"Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE","authors":"J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht","doi":"10.1109/ISLC.1994.518910","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518910","url":null,"abstract":"Summary form only given. 2.5 Gbit/s transmission over 517 km of standard fiber is reported using a monolithically integrated InGaAsP MQW EA modulator/DFB laser by selective-area MOVPE. A low chirp of 0.13 /spl Aring/ peak-peak and good reliability are shown.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126336975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus
{"title":"Modulation characteristics of short cavity distributed Bragg reflection lasers with a narrow band Bragg mirror","authors":"N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus","doi":"10.1109/ISLC.1994.519344","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519344","url":null,"abstract":"Summary form only given. We describe small and large signal modulation characteristics of distributed Bragg reflection lasers with a Bragg reflection bandwidth narrower than the cavity mode spacing.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127383012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette
{"title":"Arrays of red VCSELs with partial top dielectric stack DBRs","authors":"J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette","doi":"10.1109/ISLC.1994.519320","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519320","url":null,"abstract":"Summary form only given. We report arrays (1/spl times/64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at /spl lambda//sub 0/-660 nm for 15 /spl mu/m diameter devices with threshold currents below 2 mA.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127583962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition","authors":"T. Cockerill, M. Osowski, R. Lammert, J. Coleman","doi":"10.1109/ISLC.1994.519331","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519331","url":null,"abstract":"Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression /spl ges/24 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123098379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"132 W monolithic two-dimensional surface emitting laser arrays","authors":"D. Nam, S. Sanders, R. Waarts, D. Welch","doi":"10.1109/ISLC.1994.519363","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519363","url":null,"abstract":"We have demonstrated output powers of 3.4 W CW and 132 W Q-CW from a single element and a monolithic 4/spl times/12 element surface emitting InGaAs-AlGaAs QW lasers with ion milled 45/spl deg/ and 90/spl deg/ facets, respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132533844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa
{"title":"High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE","authors":"H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa","doi":"10.1109/ISLC.1994.519317","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519317","url":null,"abstract":"Narrow ridge waveguide 0.98-/spl mu/m InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115203349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel method to optimize complex coupling coefficients by sampled gratings","authors":"S. Hansmann, H. Walter, H. Hillmer, H. Burkhard","doi":"10.1109/ISLC.1994.519318","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519318","url":null,"abstract":"Summary form only given. We propose and demonstrate the application of sampled gratings for the variation of the coupling coefficient on a single wafer. Using this method the influence of the coupling strength on the performance of gain-coupled InGaAs-InGaAlAs DFB lasers is studied.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114242460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa
{"title":"1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier","authors":"H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa","doi":"10.1109/ISLC.1994.518902","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518902","url":null,"abstract":"The authors have fabricated 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Blue-green laser diodes","authors":"A. Ishibashi","doi":"10.1109/ISLC.1994.518893","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518893","url":null,"abstract":"Semiconductor laser diodes (LDs) have been playing a central role in many systems, such as high transmission-rate communication systems, high power energy source systems, and optical or magneto-optical memory systems, e.g.,consumer audio Compact Disc (CD) ROM systems, Mini-Disc (MD) ROM/RAM systems with AlGaAs infra-red LDs, and high definition MUSE disk systems with AlGaInP red-emitting LDs. The research and development, or the evolution, of the semiconductor LDs will be twofold. One is to integrate the conventional LDs, which have already been established as a discrete chip, into monolithic highly-functional devices. The AlGaAs/GaAs-based LDs have been in this phase. The other is to establish a discrete chip that achieves challenging targets, such as a super high power, an extremely rapid response, and a short wavelength. As the next generation of conventional LDs, the short wavelength, green and blue, LDs have been needed for higher density disk systems. It is straight forward that the shorter the wavelength becomes, the higher the density of those optical disks can be, leading to either a long time or a high definition recording. Furthermore, with the green and the blue LDs we are entering a new paradigm where RGB full-color all-solid-state light-sources are at hand in an inexpensive, mass productive, and highly compact manner.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1901 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}