Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits 用于光子集成电路的激光二极管与聚合物波导的单片集成
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519150
N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer
{"title":"Monolithic integration of a laser diode with a polymer-based waveguide for photonic integrated circuits","authors":"N. Bouadma, J. Liang, R. Pinsard-Levenson, A. Talneau, G. Herve-gruyer","doi":"10.1109/ISLC.1994.519150","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519150","url":null,"abstract":"Summary form only given. In this paper a monolithic integration of a laser diode with a polymeric based waveguide is reported as a first step in developing a monolithically integrated multi-wavelength DFB laser array with a passive polymeric optical power combiner. This alternative approach based on polymeric materials offers the advantages of potentially low optical losses and high and easy processability; and the capability of preparation of active and passive components on Ill-V wafers with already processed devices.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125277762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE 选择性面积MOVPE生长的低啁啾集成ea调制器/DFB激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518910
J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht
{"title":"Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE","authors":"J.E. Johnson, T. Tanbun-ek, Y. Chen, D. Fishman, R. Logan, P. Morton, S. Chu, A. Tate, A. Sergent, P. Sciortino, K. Wecht","doi":"10.1109/ISLC.1994.518910","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518910","url":null,"abstract":"Summary form only given. 2.5 Gbit/s transmission over 517 km of standard fiber is reported using a monolithically integrated InGaAsP MQW EA modulator/DFB laser by selective-area MOVPE. A low chirp of 0.13 /spl Aring/ peak-peak and good reliability are shown.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126336975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Modulation characteristics of short cavity distributed Bragg reflection lasers with a narrow band Bragg mirror 窄带布拉格反射镜短腔分布布拉格反射激光器的调制特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519344
N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus
{"title":"Modulation characteristics of short cavity distributed Bragg reflection lasers with a narrow band Bragg mirror","authors":"N. Tessler, Mordehai Margalit, G. Eisenstein, U. Koren, C. Burrus","doi":"10.1109/ISLC.1994.519344","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519344","url":null,"abstract":"Summary form only given. We describe small and large signal modulation characteristics of distributed Bragg reflection lasers with a Bragg reflection bandwidth narrower than the cavity mode spacing.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127383012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Arrays of red VCSELs with partial top dielectric stack DBRs 带有部分顶部介电堆dbr的红色vcsel阵列
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519320
J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette
{"title":"Arrays of red VCSELs with partial top dielectric stack DBRs","authors":"J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette","doi":"10.1109/ISLC.1994.519320","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519320","url":null,"abstract":"Summary form only given. We report arrays (1/spl times/64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at /spl lambda//sub 0/-660 nm for 15 /spl mu/m diameter devices with threshold currents below 2 mA.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127583962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition 采用选择性区金属有机化学气相沉积技术制备应变层InGaAs-GaAs埋置异质结构环形集成y耦合无源波导激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519331
T. Cockerill, M. Osowski, R. Lammert, J. Coleman
{"title":"A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition","authors":"T. Cockerill, M. Osowski, R. Lammert, J. Coleman","doi":"10.1109/ISLC.1994.519331","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519331","url":null,"abstract":"Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression /spl ges/24 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123098379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
132 W monolithic two-dimensional surface emitting laser arrays 132w单片二维面发射激光器阵列
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519363
D. Nam, S. Sanders, R. Waarts, D. Welch
{"title":"132 W monolithic two-dimensional surface emitting laser arrays","authors":"D. Nam, S. Sanders, R. Waarts, D. Welch","doi":"10.1109/ISLC.1994.519363","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519363","url":null,"abstract":"We have demonstrated output powers of 3.4 W CW and 132 W Q-CW from a single element and a monolithic 4/spl times/12 element surface emitting InGaAs-AlGaAs QW lasers with ion milled 45/spl deg/ and 90/spl deg/ facets, respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132533844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE 窄脊波导0.98-/spl mu/m InGaAs/AlGaAs应变量子阱激光器的高功率单横模操作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519317
H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa
{"title":"High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE","authors":"H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa","doi":"10.1109/ISLC.1994.519317","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519317","url":null,"abstract":"Narrow ridge waveguide 0.98-/spl mu/m InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115203349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel method to optimize complex coupling coefficients by sampled gratings 利用采样光栅优化复杂耦合系数的新方法
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519318
S. Hansmann, H. Walter, H. Hillmer, H. Burkhard
{"title":"Novel method to optimize complex coupling coefficients by sampled gratings","authors":"S. Hansmann, H. Walter, H. Hillmer, H. Burkhard","doi":"10.1109/ISLC.1994.519318","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519318","url":null,"abstract":"Summary form only given. We propose and demonstrate the application of sampled gratings for the variation of the coupling coefficient on a single wafer. Using this method the influence of the coupling strength on the performance of gain-coupled InGaAs-InGaAlAs DFB lasers is studied.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114242460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier 具有多量子势垒的1.55 /spl μ m应变GaInAs/AlGaInAs MQW激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518902
H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa
{"title":"1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier","authors":"H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa","doi":"10.1109/ISLC.1994.518902","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518902","url":null,"abstract":"The authors have fabricated 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Blue-green laser diodes 蓝绿色激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518893
A. Ishibashi
{"title":"Blue-green laser diodes","authors":"A. Ishibashi","doi":"10.1109/ISLC.1994.518893","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518893","url":null,"abstract":"Semiconductor laser diodes (LDs) have been playing a central role in many systems, such as high transmission-rate communication systems, high power energy source systems, and optical or magneto-optical memory systems, e.g.,consumer audio Compact Disc (CD) ROM systems, Mini-Disc (MD) ROM/RAM systems with AlGaAs infra-red LDs, and high definition MUSE disk systems with AlGaInP red-emitting LDs. The research and development, or the evolution, of the semiconductor LDs will be twofold. One is to integrate the conventional LDs, which have already been established as a discrete chip, into monolithic highly-functional devices. The AlGaAs/GaAs-based LDs have been in this phase. The other is to establish a discrete chip that achieves challenging targets, such as a super high power, an extremely rapid response, and a short wavelength. As the next generation of conventional LDs, the short wavelength, green and blue, LDs have been needed for higher density disk systems. It is straight forward that the shorter the wavelength becomes, the higher the density of those optical disks can be, leading to either a long time or a high definition recording. Furthermore, with the green and the blue LDs we are entering a new paradigm where RGB full-color all-solid-state light-sources are at hand in an inexpensive, mass productive, and highly compact manner.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1901 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 117
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