利用GaInAsP阱层研究应变多量子阱AlGaInP可见激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519337

A. Furuya, C. Anayama, M. Kondo, Y. Kito, M. Sugano, H. Sudo, K. Domen, T. Tanahashi

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摘要

只提供摘要形式。利用GaInAsP阱，我们独立研究了阱厚度、振荡波长和应变对AlGaInP应变多量子阱激光器阈值电流及其特征温度的影响。我们在优化后的激光器中获得了179 K (15/spl度/C-50/spl度/C)和120 K (60/spl度/C-90/spl度/C)的良好特性温度。

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Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers

Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15/spl deg/C-50/spl deg/C) and 120 K (60/spl deg/C-90/spl deg/C) in optimized laser.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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