具有多量子势垒的1.55 /spl μ m应变GaInAs/AlGaInAs MQW激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518902

H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, M. Irikawa

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引用次数: 4

摘要

作者利用多量子势垒(MQB)制备了1.55 /spl μ m应变GaInAs/AlGaInAs MQW激光器。在长波激光器中首次通过实验证明了MQB结构降低了载流子泄漏。

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1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier

The authors have fabricated 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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