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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Improving pulses from 2-contact self-pulsating DFB semiconductor lasers 改进双触点自脉冲DFB半导体激光器的脉冲
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519155
Arthur James Lowery, P. Gurney
{"title":"Improving pulses from 2-contact self-pulsating DFB semiconductor lasers","authors":"Arthur James Lowery, P. Gurney","doi":"10.1109/ISLC.1994.519155","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519155","url":null,"abstract":"Summary form only given. We propose that short pulses from a self-pulsating DFB laser will be shortened and stabilised by optical filtering and optical feedback. Simulations predict 60 ps pulses at 2.5 GHz with a contrast ratio >10 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116705987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers 价带阱深度对1.3-/spl mu/m inp基应变层多量子阱激光器光学增益均匀性的影响
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519171
S. Seki, K. Yokoyama, P. Sotirelis
{"title":"The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers","authors":"S. Seki, K. Yokoyama, P. Sotirelis","doi":"10.1109/ISLC.1994.519171","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519171","url":null,"abstract":"We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115098573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers 连续波质子注入垂直腔面发射激光器的侧模行为
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519308
G. R. Hadley, K. Lear, M. Warren, J. Scott, S. Corzine
{"title":"Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers","authors":"G. R. Hadley, K. Lear, M. Warren, J. Scott, S. Corzine","doi":"10.1109/ISLC.1994.519308","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519308","url":null,"abstract":"We employ a highly-sophisticated numerical model to provide the first study of lateral mode competition during CW operation of proton-implanted VCSELs. The model is validated by direct comparison with experimental data, and is used to explore new device designs for extending fundamental mode operation to higher powers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"444 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125769567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy 选择性面积外延生长的亚毫安阈值埋置异质结构InGaAs/GaAs单量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519149
R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman
{"title":"Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy","authors":"R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman","doi":"10.1109/ISLC.1994.519149","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519149","url":null,"abstract":"Submilliampere threshold strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Low threshold currents, high differential slope efficiencies and high output powers are reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132842461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High repetition rate by multiple colliding pulse mode-locked operation of a semiconductor laser 半导体激光器多碰撞脉冲锁模操作的高重复率
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518897
J. Martins-Filho, E. Avrutin, C. Ironside
{"title":"High repetition rate by multiple colliding pulse mode-locked operation of a semiconductor laser","authors":"J. Martins-Filho, E. Avrutin, C. Ironside","doi":"10.1109/ISLC.1994.518897","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518897","url":null,"abstract":"The multiple colliding pulse operation where 2, 3 or 4 ultrashort pulses are present simultaneously within a laser resonator is discussed both experimentally and theoretically. In 4 pulse operation, pulse widths of 1.3 ps at repetition rates of 240 GHz have been observed from a 600 /spl mu/m long laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"575 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132525444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum cascade laser: a unipolar intersubband semiconductor laser 量子级联激光器:单极子带间半导体激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519139
F. Capasso, J. Faist, D. Sivco, C. Sirtori, A. L. Hutchinson, S. G. Chu, A. Cho
{"title":"Quantum cascade laser: a unipolar intersubband semiconductor laser","authors":"F. Capasso, J. Faist, D. Sivco, C. Sirtori, A. L. Hutchinson, S. G. Chu, A. Cho","doi":"10.1109/ISLC.1994.519139","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519139","url":null,"abstract":"A new semiconductor injection laser (Quantum Cascade Laser) which differs in a fundamental way from diode lasers has been demonstrated. It relies on only one type of carrier (it is a unipolar semiconductor laser), and on electronic transitions between conduction band energy levels of quantum wells.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124491762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 98
Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region 利用拉伸应变有源区减小GaInAs/GaInAsP量子箱激光器尺寸波动效应
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519148
H. Hirayama, M. Asada
{"title":"Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region","authors":"H. Hirayama, M. Asada","doi":"10.1109/ISLC.1994.519148","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519148","url":null,"abstract":"The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 /spl mu/m low threshold laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126322730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of gain and mode field overlap for efficient proton implanted broad area vertical-cavity laser diodes 高效质子注入广域垂直腔激光二极管增益和模场重叠的优化
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519175
B. Moller, E. Zeeb, T. Hackbarth, K. Ebeling
{"title":"Optimization of gain and mode field overlap for efficient proton implanted broad area vertical-cavity laser diodes","authors":"B. Moller, E. Zeeb, T. Hackbarth, K. Ebeling","doi":"10.1109/ISLC.1994.519175","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519175","url":null,"abstract":"Overlap of gain and mode profiles in conventional planar proton implanted VCSELs is measured to be in the order of 10%. The resulting low device efficiency is considerably increased if a beam transforming layer is integrated.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"4307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114289107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-mode tunable FIR pulsed p-Ge laser 单模可调谐FIR脉冲p-Ge激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519145
A. Muravjov, S. Pavlov, V. Shastin, E. Brundermann, H.-P. Rosser
{"title":"Single-mode tunable FIR pulsed p-Ge laser","authors":"A. Muravjov, S. Pavlov, V. Shastin, E. Brundermann, H.-P. Rosser","doi":"10.1109/ISLC.1994.519145","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519145","url":null,"abstract":"A mechanically tunable selective resonator was developed and introduced in the far-infrared p-Ge laser cavity. It leads to a continuous wavelength tunability from 75 to 110 /spl mu/m. High resolved heterodyne mixing spectroscopy was used to measure the linewidth and mode structure of the p-Ge laser radiation.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123389697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers 对长波长半导体激光器阈值电流温度敏感性的新认识
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519351
J.D. Evans, J. Simmons
{"title":"New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers","authors":"J.D. Evans, J. Simmons","doi":"10.1109/ISLC.1994.519351","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519351","url":null,"abstract":"A new relationship describing the threshold current vs. temperature relation of InGaAsP/InP MQW lasers is proposed. The commonly used characteristic temperature, T/sub 0/, is replaced by a new, temperature insensitive parameter T/sub max/, which represents the lasers' maximum operating temperature.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123856043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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