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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers 价带阱深度对1.3-/spl mu/m inp基应变层多量子阱激光器光学增益均匀性的影响
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519171
S. Seki, K. Yokoyama, P. Sotirelis
{"title":"The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers","authors":"S. Seki, K. Yokoyama, P. Sotirelis","doi":"10.1109/ISLC.1994.519171","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519171","url":null,"abstract":"We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115098573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-temperature modulation dynamics of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers 1.3 /spl μ m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP压缩应变多量子阱激光器的高温调制动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519340
C. Zah, M.C. Wang, R. Bhat, T. Lee, S. Chuang, Z. Wang, D. Darby, D. Flanders, J. Hsieh
{"title":"High-temperature modulation dynamics of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers","authors":"C. Zah, M.C. Wang, R. Bhat, T. Lee, S. Chuang, Z. Wang, D. Darby, D. Flanders, J. Hsieh","doi":"10.1109/ISLC.1994.519340","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519340","url":null,"abstract":"Intrinsic small-signal modulation responses of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 /spl mu/m, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85/spl deg/C, respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123323378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers 热可调谐超结构光栅DBR激光器的窄谱线宽波长调谐
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518906
H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni
{"title":"Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers","authors":"H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni","doi":"10.1109/ISLC.1994.518906","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518906","url":null,"abstract":"Summary form only given. Thermal wavelength tuning characteristics of super-structure-grating quantum well DBR lasers with integrated heaters are demonstrated. A quasi-continuous tuning range of 40 nm is obtained while keeping the spectral linewidth below 400 kHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124376396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quantum cascade laser: a unipolar intersubband semiconductor laser 量子级联激光器:单极子带间半导体激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519139
F. Capasso, J. Faist, D. Sivco, C. Sirtori, A. L. Hutchinson, S. G. Chu, A. Cho
{"title":"Quantum cascade laser: a unipolar intersubband semiconductor laser","authors":"F. Capasso, J. Faist, D. Sivco, C. Sirtori, A. L. Hutchinson, S. G. Chu, A. Cho","doi":"10.1109/ISLC.1994.519139","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519139","url":null,"abstract":"A new semiconductor injection laser (Quantum Cascade Laser) which differs in a fundamental way from diode lasers has been demonstrated. It relies on only one type of carrier (it is a unipolar semiconductor laser), and on electronic transitions between conduction band energy levels of quantum wells.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124491762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 98
High repetition rate by multiple colliding pulse mode-locked operation of a semiconductor laser 半导体激光器多碰撞脉冲锁模操作的高重复率
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518897
J. Martins-Filho, E. Avrutin, C. Ironside
{"title":"High repetition rate by multiple colliding pulse mode-locked operation of a semiconductor laser","authors":"J. Martins-Filho, E. Avrutin, C. Ironside","doi":"10.1109/ISLC.1994.518897","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518897","url":null,"abstract":"The multiple colliding pulse operation where 2, 3 or 4 ultrashort pulses are present simultaneously within a laser resonator is discussed both experimentally and theoretically. In 4 pulse operation, pulse widths of 1.3 ps at repetition rates of 240 GHz have been observed from a 600 /spl mu/m long laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"575 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132525444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy 选择性面积外延生长的亚毫安阈值埋置异质结构InGaAs/GaAs单量子阱激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519149
R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman
{"title":"Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy","authors":"R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman","doi":"10.1109/ISLC.1994.519149","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519149","url":null,"abstract":"Submilliampere threshold strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Low threshold currents, high differential slope efficiencies and high output powers are reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132842461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region 利用拉伸应变有源区减小GaInAs/GaInAsP量子箱激光器尺寸波动效应
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519148
H. Hirayama, M. Asada
{"title":"Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region","authors":"H. Hirayama, M. Asada","doi":"10.1109/ISLC.1994.519148","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519148","url":null,"abstract":"The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 /spl mu/m low threshold laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126322730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs 压缩应变量子阱680nm AlGaInP ld的高功率高可靠工作(60/spl度/C下40 mW)
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519316
S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa
{"title":"High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs","authors":"S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa","doi":"10.1109/ISLC.1994.519316","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519316","url":null,"abstract":"Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123265228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Single-mode tunable FIR pulsed p-Ge laser 单模可调谐FIR脉冲p-Ge激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519145
A. Muravjov, S. Pavlov, V. Shastin, E. Brundermann, H.-P. Rosser
{"title":"Single-mode tunable FIR pulsed p-Ge laser","authors":"A. Muravjov, S. Pavlov, V. Shastin, E. Brundermann, H.-P. Rosser","doi":"10.1109/ISLC.1994.519145","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519145","url":null,"abstract":"A mechanically tunable selective resonator was developed and introduced in the far-infrared p-Ge laser cavity. It leads to a continuous wavelength tunability from 75 to 110 /spl mu/m. High resolved heterodyne mixing spectroscopy was used to measure the linewidth and mode structure of the p-Ge laser radiation.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123389697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers 对长波长半导体激光器阈值电流温度敏感性的新认识
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519351
J.D. Evans, J. Simmons
{"title":"New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers","authors":"J.D. Evans, J. Simmons","doi":"10.1109/ISLC.1994.519351","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519351","url":null,"abstract":"A new relationship describing the threshold current vs. temperature relation of InGaAsP/InP MQW lasers is proposed. The commonly used characteristic temperature, T/sub 0/, is replaced by a new, temperature insensitive parameter T/sub max/, which represents the lasers' maximum operating temperature.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123856043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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