发布求助
文献互助 智能选刊 最新文献

Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

筛选
英文 中文
A fast switching N-frequency laser integrated with an electroabsorption modulator 一种集成电吸收调制器的快速开关n频激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518908
U. Koren, B. Glance, N. K. Shankaranarayanan, B. Miller, M. Young, M. Chien
{"title":"A fast switching N-frequency laser integrated with an electroabsorption modulator","authors":"U. Koren, B. Glance, N. K. Shankaranarayanan, B. Miller, M. Young, M. Chien","doi":"10.1109/ISLC.1994.518908","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518908","url":null,"abstract":"Summary form only given. In the present work we describe the performance of an integrated device which combines a fast frequency switching laser, and an external electroabsorption modulator for data encoding, on the same semiconductor chip. This device has applications in WDM switching and routing networks.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122623827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth 提高了宽增益带宽垂直腔面发射激光器的温度特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519323
M. Kajita, T. Kawakami, T. Yoshikawa, A. Uemura, Y. Sugimoto, K. Kasahara
{"title":"Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth","authors":"M. Kajita, T. Kawakami, T. Yoshikawa, A. Uemura, Y. Sugimoto, K. Kasahara","doi":"10.1109/ISLC.1994.519323","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519323","url":null,"abstract":"A InGaAs QW vertical cavity surface-emitting laser with a broad-gain bandwidth was fabricated by using multiple-quantum-well active layers with different bandgap energies, increasing the temperature range by more than 20/spl deg/C.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dynamics of injection locking of mode locked semiconductor lasers 锁模半导体激光器注入锁定动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519158
Mordehai Margalit, M. Orenstein, G. Eisenstein, V. Mikhaelshvili
{"title":"Dynamics of injection locking of mode locked semiconductor lasers","authors":"Mordehai Margalit, M. Orenstein, G. Eisenstein, V. Mikhaelshvili","doi":"10.1109/ISLC.1994.519158","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519158","url":null,"abstract":"Summary form only given. We report the first observation of synchronous injection locking of a mode locked semiconductor laser. Locking ranges, both in the time and in the frequency domains, were measured, as well as noise parameters. Experimental results were compared to a model, with an emphasis on possible instabilities.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121973076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode 低阈值应变层量子阱630nm AlGaInP ld与应变诱导极化模式的相对强度
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519166
T. Tanaka, H. Yanagisawa, S. Kawanaka, S. Minagawa
{"title":"Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode","authors":"T. Tanaka, H. Yanagisawa, S. Kawanaka, S. Minagawa","doi":"10.1109/ISLC.1994.519166","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519166","url":null,"abstract":"Summary form only given. Low-threshold CW operation of 630-nm AlGaInP LDs with compressive- or tensile-strained quantum-well structures is investigated. In addition, the correlation between the threshold current and polarization-mode intensity is discussed in terms of strain effects and injected carrier density.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128173386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection 具有低阈值电流、高谐振频率和低注入电流带宽的多量子阱1.55 /spl mu/m DFB激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519343
O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga
{"title":"Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection","authors":"O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga","doi":"10.1109/ISLC.1994.519343","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519343","url":null,"abstract":"Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132252647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers 带InGaAlP带偏移还原层的p型GaAs衬底上znse基蓝绿激光二极管的低压载流子注入
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519333
M. Ishikawa, Y. Nishikawa, S. Saito, M. Onomura, P. J. Parbrook, K. Nitta, J. Rennie, G. Hatakoshi
{"title":"Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers","authors":"M. Ishikawa, Y. Nishikawa, S. Saito, M. Onomura, P. J. Parbrook, K. Nitta, J. Rennie, G. Hatakoshi","doi":"10.1109/ISLC.1994.519333","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519333","url":null,"abstract":"Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"137 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131362493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-frequency operation of SQW diode laser modulated by dual optical confinement factor and pumping current density control 双光约束因子和抽运电流密度控制调制SQW二极管激光器的高频工作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519159
S. A. Gurevich, I. E. Chebunina, M. Shatalov, G. Shtengel, V. Gorfinkel
{"title":"High-frequency operation of SQW diode laser modulated by dual optical confinement factor and pumping current density control","authors":"S. A. Gurevich, I. E. Chebunina, M. Shatalov, G. Shtengel, V. Gorfinkel","doi":"10.1109/ISLC.1994.519159","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519159","url":null,"abstract":"Summary form only given. We demonstrate high-frequency operation of AlGaAs/GaAs SCH SQW four-terminal ridge-guide diode laser modulated by dual optical confinement factor and pumping current control. 20 ps switching time was observed at 3 mW output power.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"582 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116544199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-temperature modulation dynamics of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers 1.3 /spl μ m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP压缩应变多量子阱激光器的高温调制动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519340
C. Zah, M.C. Wang, R. Bhat, T. Lee, S. Chuang, Z. Wang, D. Darby, D. Flanders, J. Hsieh
{"title":"High-temperature modulation dynamics of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers","authors":"C. Zah, M.C. Wang, R. Bhat, T. Lee, S. Chuang, Z. Wang, D. Darby, D. Flanders, J. Hsieh","doi":"10.1109/ISLC.1994.519340","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519340","url":null,"abstract":"Intrinsic small-signal modulation responses of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 /spl mu/m, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85/spl deg/C, respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123323378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
The effect of dynamic spatial hole burning on the second and third order intermodulation distortion in DFB lasers 动态空间孔燃烧对DFB激光器二阶和三阶互调失真的影响
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519138
M. Kito, H. Sato, N. Otsuka, N. Takenaka, M. Ishino, Y. Matsui
{"title":"The effect of dynamic spatial hole burning on the second and third order intermodulation distortion in DFB lasers","authors":"M. Kito, H. Sato, N. Otsuka, N. Takenaka, M. Ishino, Y. Matsui","doi":"10.1109/ISLC.1994.519138","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519138","url":null,"abstract":"Analysis of second and third order intermodulation distortion characteristics is, for the first time, performed including dynamic longitudinal spatial hole burning effect in DFB lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"316 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123468275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers 热可调谐超结构光栅DBR激光器的窄谱线宽波长调谐
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518906
H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni
{"title":"Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers","authors":"H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni","doi":"10.1109/ISLC.1994.518906","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518906","url":null,"abstract":"Summary form only given. Thermal wavelength tuning characteristics of super-structure-grating quantum well DBR lasers with integrated heaters are demonstrated. A quasi-continuous tuning range of 40 nm is obtained while keeping the spectral linewidth below 400 kHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124376396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书