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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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A fast switching N-frequency laser integrated with an electroabsorption modulator 一种集成电吸收调制器的快速开关n频激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518908
U. Koren, B. Glance, N. K. Shankaranarayanan, B. Miller, M. Young, M. Chien
{"title":"A fast switching N-frequency laser integrated with an electroabsorption modulator","authors":"U. Koren, B. Glance, N. K. Shankaranarayanan, B. Miller, M. Young, M. Chien","doi":"10.1109/ISLC.1994.518908","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518908","url":null,"abstract":"Summary form only given. In the present work we describe the performance of an integrated device which combines a fast frequency switching laser, and an external electroabsorption modulator for data encoding, on the same semiconductor chip. This device has applications in WDM switching and routing networks.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122623827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy hcl辅助金属有机气相外延生长AlInP阻流层的实指数引导高带隙能alainp可见激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519354
R. Kobayashi, H. Hotta, F. Miyasaka, K. Hara, K. Kobayashi
{"title":"Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy","authors":"R. Kobayashi, H. Hotta, F. Miyasaka, K. Hara, K. Kobayashi","doi":"10.1109/ISLC.1994.519354","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519354","url":null,"abstract":"Summary form only given. Selective growth of high bandgap energy AlInP layers were established by HCl-assisted MOVPE and applied to real index guided AlGaInP high power lasers for the first time. Reduction in threshold current and increase in slope efficiency were obtained. CW operation over 50 mW without any kinks was achieved.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114860148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dynamics of injection locking of mode locked semiconductor lasers 锁模半导体激光器注入锁定动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519158
Mordehai Margalit, M. Orenstein, G. Eisenstein, V. Mikhaelshvili
{"title":"Dynamics of injection locking of mode locked semiconductor lasers","authors":"Mordehai Margalit, M. Orenstein, G. Eisenstein, V. Mikhaelshvili","doi":"10.1109/ISLC.1994.519158","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519158","url":null,"abstract":"Summary form only given. We report the first observation of synchronous injection locking of a mode locked semiconductor laser. Locking ranges, both in the time and in the frequency domains, were measured, as well as noise parameters. Experimental results were compared to a model, with an emphasis on possible instabilities.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121973076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode 低阈值应变层量子阱630nm AlGaInP ld与应变诱导极化模式的相对强度
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519166
T. Tanaka, H. Yanagisawa, S. Kawanaka, S. Minagawa
{"title":"Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode","authors":"T. Tanaka, H. Yanagisawa, S. Kawanaka, S. Minagawa","doi":"10.1109/ISLC.1994.519166","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519166","url":null,"abstract":"Summary form only given. Low-threshold CW operation of 630-nm AlGaInP LDs with compressive- or tensile-strained quantum-well structures is investigated. In addition, the correlation between the threshold current and polarization-mode intensity is discussed in terms of strain effects and injected carrier density.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128173386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers 带InGaAlP带偏移还原层的p型GaAs衬底上znse基蓝绿激光二极管的低压载流子注入
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519333
M. Ishikawa, Y. Nishikawa, S. Saito, M. Onomura, P. J. Parbrook, K. Nitta, J. Rennie, G. Hatakoshi
{"title":"Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers","authors":"M. Ishikawa, Y. Nishikawa, S. Saito, M. Onomura, P. J. Parbrook, K. Nitta, J. Rennie, G. Hatakoshi","doi":"10.1109/ISLC.1994.519333","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519333","url":null,"abstract":"Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"137 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131362493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection 具有低阈值电流、高谐振频率和低注入电流带宽的多量子阱1.55 /spl mu/m DFB激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519343
O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga
{"title":"Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection","authors":"O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga","doi":"10.1109/ISLC.1994.519343","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519343","url":null,"abstract":"Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132252647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The effect of dynamic spatial hole burning on the second and third order intermodulation distortion in DFB lasers 动态空间孔燃烧对DFB激光器二阶和三阶互调失真的影响
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519138
M. Kito, H. Sato, N. Otsuka, N. Takenaka, M. Ishino, Y. Matsui
{"title":"The effect of dynamic spatial hole burning on the second and third order intermodulation distortion in DFB lasers","authors":"M. Kito, H. Sato, N. Otsuka, N. Takenaka, M. Ishino, Y. Matsui","doi":"10.1109/ISLC.1994.519138","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519138","url":null,"abstract":"Analysis of second and third order intermodulation distortion characteristics is, for the first time, performed including dynamic longitudinal spatial hole burning effect in DFB lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"316 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123468275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers 连续波质子注入垂直腔面发射激光器的侧模行为
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519308
G. R. Hadley, K. Lear, M. Warren, J. Scott, S. Corzine
{"title":"Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers","authors":"G. R. Hadley, K. Lear, M. Warren, J. Scott, S. Corzine","doi":"10.1109/ISLC.1994.519308","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519308","url":null,"abstract":"We employ a highly-sophisticated numerical model to provide the first study of lateral mode competition during CW operation of proton-implanted VCSELs. The model is validated by direct comparison with experimental data, and is used to explore new device designs for extending fundamental mode operation to higher powers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"444 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125769567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improving pulses from 2-contact self-pulsating DFB semiconductor lasers 改进双触点自脉冲DFB半导体激光器的脉冲
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519155
Arthur James Lowery, P. Gurney
{"title":"Improving pulses from 2-contact self-pulsating DFB semiconductor lasers","authors":"Arthur James Lowery, P. Gurney","doi":"10.1109/ISLC.1994.519155","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519155","url":null,"abstract":"Summary form only given. We propose that short pulses from a self-pulsating DFB laser will be shortened and stabilised by optical filtering and optical feedback. Simulations predict 60 ps pulses at 2.5 GHz with a contrast ratio >10 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116705987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-frequency operation of SQW diode laser modulated by dual optical confinement factor and pumping current density control 双光约束因子和抽运电流密度控制调制SQW二极管激光器的高频工作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519159
S. A. Gurevich, I. E. Chebunina, M. Shatalov, G. Shtengel, V. Gorfinkel
{"title":"High-frequency operation of SQW diode laser modulated by dual optical confinement factor and pumping current density control","authors":"S. A. Gurevich, I. E. Chebunina, M. Shatalov, G. Shtengel, V. Gorfinkel","doi":"10.1109/ISLC.1994.519159","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519159","url":null,"abstract":"Summary form only given. We demonstrate high-frequency operation of AlGaAs/GaAs SCH SQW four-terminal ridge-guide diode laser modulated by dual optical confinement factor and pumping current control. 20 ps switching time was observed at 3 mW output power.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"582 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116544199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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