O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga
{"title":"具有低阈值电流、高谐振频率和低注入电流带宽的多量子阱1.55 /spl mu/m DFB激光器","authors":"O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga","doi":"10.1109/ISLC.1994.519343","DOIUrl":null,"url":null,"abstract":"Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection\",\"authors\":\"O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga\",\"doi\":\"10.1109/ISLC.1994.519343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.