Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519166

T. Tanaka, H. Yanagisawa, S. Kawanaka, S. Minagawa

引用次数: 2

Abstract

Summary form only given. Low-threshold CW operation of 630-nm AlGaInP LDs with compressive- or tensile-strained quantum-well structures is investigated. In addition, the correlation between the threshold current and polarization-mode intensity is discussed in terms of strain effects and injected carrier density.

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低阈值应变层量子阱630nm AlGaInP ld与应变诱导极化模式的相对强度

只提供摘要形式。研究了具有压缩或拉伸应变量子阱结构的630nm AlGaInP ld的低阈值连续波运算。此外，从应变效应和注入载流子密度的角度讨论了阈值电流与极化模强度的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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