Multi quantum well 1.55 /spl mu/m DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519343

O. Kjebon, U. Ohlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, T. Klinga

引用次数: 2

Abstract

Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA/sup 1/2/ and high maximum bandwidth, 21.7 GHz, have been fabricated.

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具有低阈值电流、高谐振频率和低注入电流带宽的多量子阱1.55 /spl mu/m DFB激光器

只提供摘要形式。制备了低阈值3.4 mA、共振频率与阈值以上电流平方根斜率大、2.6 GHz/mA/sup 1/2/、最大带宽21.7 GHz的多量子阱GaInAsP DFB埋地异质结构激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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