带InGaAlP带偏移还原层的p型GaAs衬底上znse基蓝绿激光二极管的低压载流子注入

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519333

M. Ishikawa, Y. Nishikawa, S. Saito, M. Onomura, P. J. Parbrook, K. Nitta, J. Rennie, G. Hatakoshi

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引用次数: 1

摘要

只提供摘要形式。从理论上和实验上证明了ZnSe/CdZnSe蓝绿激光器的低压电流注入。由于p型GaAs衬底与p型ZnSe层之间存在较大的价带偏移，因此InGaAlP层的插入降低了过量压降。InGaAlP层也很有用，因为可以在其上生长高浓度p型ZnSe层。

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Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers

Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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