hcl辅助金属有机气相外延生长AlInP阻流层的实指数引导高带隙能alainp可见激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519354

R. Kobayashi, H. Hotta, F. Miyasaka, K. Hara, K. Kobayashi

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引用次数: 4

摘要

只提供摘要形式。利用hcl辅助MOVPE技术建立了高带隙能量alainp层的选择性生长，并首次应用于真实折射率引导AlGaInP高功率激光器。降低了阈值电流，提高了斜坡效率。连续工作功率超过50 mW，无任何扭结。

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Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

Summary form only given. Selective growth of high bandgap energy AlInP layers were established by HCl-assisted MOVPE and applied to real index guided AlGaInP high power lasers for the first time. Reduction in threshold current and increase in slope efficiency were obtained. CW operation over 50 mW without any kinks was achieved.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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