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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Above-threshold behavior of high-power, single-mode ARROW-type diode lasers 高功率单模arrow型二极管激光器的超阈值行为
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519313
L. Mawst, D. Botez, R. Nabiev, C. Zmudzinski
{"title":"Above-threshold behavior of high-power, single-mode ARROW-type diode lasers","authors":"L. Mawst, D. Botez, R. Nabiev, C. Zmudzinski","doi":"10.1109/ISLC.1994.519313","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519313","url":null,"abstract":"Above-threshold analysis of ARROW-type diode lasers is performed for the first time. One key finding is that preferential pumping of the antiguide core dramatically enhances the single-mode power, in good agreement with experiment. Single-spatial-mode operation in a stable beam can be maintained to >10x threshold from large-aperture (6-20 /spl mu/m) devices.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123084628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Four-wave mixing in semiconductor optical amplifiers at THz detuning frequencies: experiment and theory 半导体光放大器在太赫兹失谐频率下的四波混频:实验与理论
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518921
J. Mørk, A. Uskov, J. Mark, M. Tatham, G. Sherlock
{"title":"Four-wave mixing in semiconductor optical amplifiers at THz detuning frequencies: experiment and theory","authors":"J. Mørk, A. Uskov, J. Mark, M. Tatham, G. Sherlock","doi":"10.1109/ISLC.1994.518921","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518921","url":null,"abstract":"Highly non-degenerate four-wave mixing processes in semiconductor optical amplifiers are analyzed by comparing experimental data at detuning frequencies up to 3 THz with numerical calculations based on microscopic density matrix equations.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125212391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
1.5 /spl mu/m InGaAsP/InP large mode size laser for high coupling efficiency to cleaved single mode fibre 1.5 /spl mu/m InGaAsP/InP大模尺寸激光器，用于切割单模光纤的高耦合效率
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519328
I. Lealman, M. Robertson, L. Rivers, M. Harlow, S. Perrin, C. P. Seltzer
{"title":"1.5 /spl mu/m InGaAsP/InP large mode size laser for high coupling efficiency to cleaved single mode fibre","authors":"I. Lealman, M. Robertson, L. Rivers, M. Harlow, S. Perrin, C. P. Seltzer","doi":"10.1109/ISLC.1994.519328","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519328","url":null,"abstract":"Increased mode size MQW BH lasers utilising a tapered active region and passive guide have shown cleaved fibre coupling losses down to 4.1 dB with threshold currents of 4.9 mA and 15 mA at 20/spl deg/C and 80/spl deg/C respectively.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126020412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelocking of low threshold VCSEL with pigtailed fiber resonator 带尾纤谐振腔的低阈值VCSEL模型锁定
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519161
U. Fiedler, E. Zeeb, K. Panzlaff, C. Jung, K. Ebeling
{"title":"Modelocking of low threshold VCSEL with pigtailed fiber resonator","authors":"U. Fiedler, E. Zeeb, K. Panzlaff, C. Jung, K. Ebeling","doi":"10.1109/ISLC.1994.519161","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519161","url":null,"abstract":"Summary form only given. We have generated 24 ps pulses using a modelocked vertical cavity surface emitting laser (VCSEL) with a fiber optic resonator. CW threshold current of the modelocking configuration is as low as 1.8 mA. The timing jitter of the pulses remains below 1 ps.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134016865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Threshold current and modulation dynamics in quantum dot lasers 量子点激光器的阈值电流和调制动力学
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519142
H. Nakayama, Y. Arakawa
{"title":"Threshold current and modulation dynamics in quantum dot lasers","authors":"H. Nakayama, Y. Arakawa","doi":"10.1109/ISLC.1994.519142","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519142","url":null,"abstract":"Threshold current and modulation dynamics are theoretically discussed taking into account the detailed behavior of carrier dynamics related to the bottleneck problem. The results indicate that extremely low threshold current and high modulation frequency devices can be realized if the quantum dot structure is correctly designed.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131644058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tunable 2.7-3.7 /spl mu/m InAsSb(P)/InAsSbP low threshold diode lasers 可调谐2.7-3.7 /spl mu/m InAsSb(P)/InAsSbP低阈值二极管激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519355
Y. Yakovlev, A. Baranov, A. N. Imenkov, V. Sherstnev
{"title":"Tunable 2.7-3.7 /spl mu/m InAsSb(P)/InAsSbP low threshold diode lasers","authors":"Y. Yakovlev, A. Baranov, A. N. Imenkov, V. Sherstnev","doi":"10.1109/ISLC.1994.519355","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519355","url":null,"abstract":"The laser structures were grown by liquid phase epitaxial growth (LPE) on InAs (100) substrate and consisted of two cladding layers of the InAsSbP alloy with InP mole fraction and active layer which was made either of InAsSbP with a lower band gap or of the InAsSb solid solution. This report is devoted to study the temperature dependence of the threshold current and laser tunability by current.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131826475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
800 mW peak power self-sustained pulsation GaAlAs laser diodes 峰值功率为800mw的自持续脉冲GaAlAs激光二极管
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519356
T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, K. Itoh
{"title":"800 mW peak power self-sustained pulsation GaAlAs laser diodes","authors":"T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, K. Itoh","doi":"10.1109/ISLC.1994.519356","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519356","url":null,"abstract":"We have developed a self-sustained pulsation laser whose peak power is as high as 0.8 W for the first time, by using a new multiple-quantum-well (MQW) real refractive index guided structure with large saturable absorber.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133145610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multi-longitudinal-mode two-dimensional analysis of self-sustained pulsating laser diodes 自持续脉冲激光二极管的多纵模二维分析
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519160
M. Yuri, T. Takayama, O. Imafuji, H. Sugiura, H. Naito, M. Kume, K. Itoh, T. Baba, J. Harris
{"title":"Multi-longitudinal-mode two-dimensional analysis of self-sustained pulsating laser diodes","authors":"M. Yuri, T. Takayama, O. Imafuji, H. Sugiura, H. Naito, M. Kume, K. Itoh, T. Baba, J. Harris","doi":"10.1109/ISLC.1994.519160","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519160","url":null,"abstract":"Summary form only given. The structural dependence of self-sustained pulsation in AlGaAs laser diodes is quantitively analyzed for the first time, with the incorporation of the two-dimensional distribution of carriers and photons into the multi-longitudinal-mode rate equations.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132298069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A multiwavelength waveguide grating router laser 一种多波长波导光栅路由器激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518907
M. Zimgibl, B. Glance, L. Stulz, C. Joyner, G. Raybon, I. Kaminow
{"title":"A multiwavelength waveguide grating router laser","authors":"M. Zimgibl, B. Glance, L. Stulz, C. Joyner, G. Raybon, I. Kaminow","doi":"10.1109/ISLC.1994.518907","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518907","url":null,"abstract":"Summary form only given. Measurements on a multiwavelength laser source are reported. The source can emit cw simultaneously on 11 frequencies that are precisely spaced by 3.2 nm. Laser oscillation occurs on a single longitudinal mode with a 5 MHz linewidth. The 18 mm long cavity limits the direct modulation rate to 155 Mbps.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115952921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth 提高了宽增益带宽垂直腔面发射激光器的温度特性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519323
M. Kajita, T. Kawakami, T. Yoshikawa, A. Uemura, Y. Sugimoto, K. Kasahara
{"title":"Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth","authors":"M. Kajita, T. Kawakami, T. Yoshikawa, A. Uemura, Y. Sugimoto, K. Kasahara","doi":"10.1109/ISLC.1994.519323","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519323","url":null,"abstract":"A InGaAs QW vertical cavity surface-emitting laser with a broad-gain bandwidth was fabricated by using multiple-quantum-well active layers with different bandgap energies, increasing the temperature range by more than 20/spl deg/C.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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