{"title":"Threshold current and modulation dynamics in quantum dot lasers","authors":"H. Nakayama, Y. Arakawa","doi":"10.1109/ISLC.1994.519142","DOIUrl":null,"url":null,"abstract":"Threshold current and modulation dynamics are theoretically discussed taking into account the detailed behavior of carrier dynamics related to the bottleneck problem. The results indicate that extremely low threshold current and high modulation frequency devices can be realized if the quantum dot structure is correctly designed.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Threshold current and modulation dynamics are theoretically discussed taking into account the detailed behavior of carrier dynamics related to the bottleneck problem. The results indicate that extremely low threshold current and high modulation frequency devices can be realized if the quantum dot structure is correctly designed.