Tunable 2.7-3.7 /spl mu/m InAsSb(P)/InAsSbP low threshold diode lasers

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519355

Y. Yakovlev, A. Baranov, A. N. Imenkov, V. Sherstnev

引用次数: 1

Abstract

The laser structures were grown by liquid phase epitaxial growth (LPE) on InAs (100) substrate and consisted of two cladding layers of the InAsSbP alloy with InP mole fraction and active layer which was made either of InAsSbP with a lower band gap or of the InAsSb solid solution. This report is devoted to study the temperature dependence of the threshold current and laser tunability by current.

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可调谐2.7-3.7 /spl mu/m InAsSb(P)/InAsSbP低阈值二极管激光器

采用液相外延生长(LPE)方法在InAs(100)衬底上生长激光结构，由含InP摩尔分数的InAsSbP合金和含较低带隙的InAsSbP或InAsSb固溶体组成的活性层组成。本文主要研究了阈值电流与温度的关系以及电流对激光可调性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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