1.3 /spl μ m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP压缩应变多量子阱激光器的高温调制动力学

C. Zah, M.C. Wang, R. Bhat, T. Lee, S. Chuang, Z. Wang, D. Darby, D. Flanders, J. Hsieh
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引用次数: 10

摘要

研究了具有三种不同势垒层的1.3 /spl μ m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP压缩应变多量子阱激光器的本征小信号调制响应。对于势垒带隙波长为1.01 /spl mu/m的激光器,k因子为0.24-0.25 ns,在25、65和85/spl℃下分别测量了19.5、15和13.9 GHz的热限3-dB带宽。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-temperature modulation dynamics of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers
Intrinsic small-signal modulation responses of 1.3 /spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 /spl mu/m, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85/spl deg/C, respectively.
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