压缩应变量子阱680nm AlGaInP ld的高功率高可靠工作(60/spl度/C下40 mW)

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519316

S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa

{"title":"压缩应变量子阱680nm AlGaInP ld的高功率高可靠工作(60/spl度/C下40 mW)","authors":"S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa","doi":"10.1109/ISLC.1994.519316","DOIUrl":null,"url":null,"abstract":"Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs\",\"authors\":\"S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa\",\"doi\":\"10.1109/ISLC.1994.519316\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519316\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

对压缩应变下优化的薄量子阱(QW)结构进行了适合于光盘系统光源的高功率特性测试。因此，压缩应变三量子阱ld可以在40 mW和60/spl℃的高温下稳定工作超过1000小时。

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High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs

Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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