利用拉伸应变有源区减小GaInAs/GaInAsP量子箱激光器尺寸波动效应

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519148

H. Hirayama, M. Asada

{"title":"利用拉伸应变有源区减小GaInAs/GaInAsP量子箱激光器尺寸波动效应","authors":"H. Hirayama, M. Asada","doi":"10.1109/ISLC.1994.519148","DOIUrl":null,"url":null,"abstract":"The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 /spl mu/m low threshold laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region\",\"authors\":\"H. Hirayama, M. Asada\",\"doi\":\"10.1109/ISLC.1994.519148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 /spl mu/m low threshold laser.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

作者从理论上证明了使用拉伸应变有源区可以降低GaInAs/GaInAsP QB激光器中量子箱(QB)尺寸波动效应。拉伸应变QB激光器对1.5 /spl μ m /m低阈值激光器非常有利。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region

The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 /spl mu/m low threshold laser.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

自引率

0.00%

发文量