Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519149

R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman

引用次数: 1

Abstract

Submilliampere threshold strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Low threshold currents, high differential slope efficiencies and high output powers are reported.

查看原文本刊更多论文

选择性面积外延生长的亚毫安阈值埋置异质结构InGaAs/GaAs单量子阱激光器

描述了用选择性面积MOCVD生长的亚毫安阈值应变层InGaAs-GaAs-AlGaAs单量子阱埋异质结构激光器。低阈值电流，高差分斜率效率和高输出功率被报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

自引率

0.00%

发文量