High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519316

S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Minagawa

引用次数: 2

Abstract

Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.

查看原文本刊更多论文

压缩应变量子阱680nm AlGaInP ld的高功率高可靠工作(60/spl度/C下40 mW)

对压缩应变下优化的薄量子阱(QW)结构进行了适合于光盘系统光源的高功率特性测试。因此，压缩应变三量子阱ld可以在40 mW和60/spl℃的高温下稳定工作超过1000小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

自引率

0.00%

发文量