R. Lammert, T. Cockerill, D. Forbes, G.M. Smith, J. Coleman
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Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy
Submilliampere threshold strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Low threshold currents, high differential slope efficiencies and high output powers are reported.
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