{"title":"价带阱深度对1.3-/spl mu/m inp基应变层多量子阱激光器光学增益均匀性的影响","authors":"S. Seki, K. Yokoyama, P. Sotirelis","doi":"10.1109/ISLC.1994.519171","DOIUrl":null,"url":null,"abstract":"We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers\",\"authors\":\"S. Seki, K. Yokoyama, P. Sotirelis\",\"doi\":\"10.1109/ISLC.1994.519171\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519171\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of valence-band well depth on optical gain uniformity in 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers
We compare the optical gain uniformity in 1.3-/spl mu/m InAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.56:0.44) and InGaAsP/InP (/spl Delta/Ec:/spl Delta/Ev=0.40:0.60) compressively-strained multiple-quantum-well (MQW) lasers with a wide-bandgap barrier. We quantitatively demonstrate that the valence-band well depth plays a dominant role in determining the optical gain uniformity in InP-based MQW lasers.
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