132w单片二维面发射激光器阵列

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519363

D. Nam, S. Sanders, R. Waarts, D. Welch

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引用次数: 0

摘要

我们已经证明了单元件和单片4/spl次/12元件表面发射的InGaAs-AlGaAs QW激光器的输出功率分别为3.4 W连续波和132 W q -连续波，离子研磨为45/spl度/和90/spl度/面。

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132 W monolithic two-dimensional surface emitting laser arrays

We have demonstrated output powers of 3.4 W CW and 132 W Q-CW from a single element and a monolithic 4/spl times/12 element surface emitting InGaAs-AlGaAs QW lasers with ion milled 45/spl deg/ and 90/spl deg/ facets, respectively.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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