窄脊波导0.98-/spl mu/m InGaAs/AlGaAs应变量子阱激光器的高功率单横模操作

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519317

H. Chida, K. Hamamoto, K. Fukagai, T. Miyazaki, S. Ishikawa

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摘要

采用原位监测反应离子束刻蚀法制备的窄脊波导InGaAs/AlGaAs量子阱激光二极管(LDs)在基侧模式下工作功率高达254 mW，光纤耦合功率高达150 mW。

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High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

Narrow ridge waveguide 0.98-/spl mu/m InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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