Study of strained multiquantum well AlGaInP visible lasers using GaInAsP well layers

Abstract

Summary form only given. Using GaInAsP wells, we studied independently the effect of well thickness, oscillation wavelength and strain on the threshold current and its characteristic temperature of AlGaInP strained multiquantum well lasers. We obtained good characteristic temperature of 179 K (15/spl deg/C-50/spl deg/C) and 120 K (60/spl deg/C-90/spl deg/C) in optimized laser.