High efficiency visible single mode laser diodes

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519154

R. Geels, W. E. Plano, D. Welch

引用次数: 2

Abstract

We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported.

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高效可见单模激光二极管

我们报道了低阈值和高效率的660 nm波段单模InGaP QW激光二极管。阈值电流低至13毫安。外微分量子效率大于80%的报道。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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