带有部分顶部介电堆dbr的红色vcsel阵列

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519320

J. A. Lott, R. Schneider, K. Malloy, S. Kilcoyne, K. Choquette

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引用次数: 1

摘要

只提供摘要形式。本文报道了具有部分顶部介电堆叠分布布拉格反射器(DBRs)的红色垂直腔GaInP应变量子阱表面发射激光器(VCSELs)阵列(1/spl倍/64)。对于直径15 /spl mu/m、阈值电流低于2 mA的器件，在/spl λ //sub 0/-660 nm处输出功率超过0.5 mW。

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Arrays of red VCSELs with partial top dielectric stack DBRs

Summary form only given. We report arrays (1/spl times/64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at /spl lambda//sub 0/-660 nm for 15 /spl mu/m diameter devices with threshold currents below 2 mA.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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