室温连续波阈值电流165 /spl mu/A的应变层单量子阱InGaAs激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519170

T.R. Chen, B. Zhao, L. Eng, Y. Zhuang, A. Yariv

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摘要

利用短腔长、高反射率涂层的埋置异质结构应变层单量子阱InGaAs激光器，在室温下获得了创纪录的低阈值电流165 /spl μ A (CW)。

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Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 /spl mu/A

A record low threshold current 165 /spl mu/A (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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