超低阈值(0.56 mA) 1.35-/spl mu/m InGaAsP/InP压缩应变mqw激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518899

K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi

{"title":"超低阈值(0.56 mA) 1.35-/spl mu/m InGaAsP/InP压缩应变mqw激光器","authors":"K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi","doi":"10.1109/ISLC.1994.518899","DOIUrl":null,"url":null,"abstract":"Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"17 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers\",\"authors\":\"K. Uomi, T. Tsuchiya, M. Komori, A. Oka, K. Shinoda, A. Oishi\",\"doi\":\"10.1109/ISLC.1994.518899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"17 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.518899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.518899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在室温下，在1.35-/spl μ m InGaAsP/InP应变mqw激光器中获得了0.56 mA(脉冲)和0.58 mA(连续)的极低阈值电流。这些值是长波激光器报道过的最低值。

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Ultralow-threshold (0.56 mA) 1.35-/spl mu/m InGaAsP/InP compressive-strained-MQW lasers

Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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