具有GaAs/InGaP超晶格光约束层的0.98 /spl mu/m InGaAs/InGaP应变量子阱激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519172

M. Usami, Y. Matsushima

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引用次数: 0

摘要

在InGaAs/InGaP应变QW激光器中引入GaAs/InGaP超晶格光约束层(SL-OCL)，提高了内部量子效率和阈值电流密度。本文还讨论了多量子势垒(MQB)效应和渐变指数效应对载流子的限制。

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0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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