Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519157

A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm

引用次数: 4

Abstract

Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.

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离子注入可饱和吸收区的InGaAsP/InP激光二极管被动锁模产生1.535 /spl mu/m高重复频率亚皮秒脉冲

只提供摘要形式。我们报告了从被动锁模InGaAsP/InP激光二极管以104 GHz重复率获得0.64 ps宽的光脉冲。激光发射光谱与掺铒光纤放大器的放大带相对应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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