Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519164

H. Shiao, Wei Lin, Jian-Guang Chen, Yuan-Kuag Tu, Ching-Ting Lee

引用次数: 0

Abstract

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm/sup -1/.

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具有InGaAsP过渡层的无铝InGaAs/GaAs/InGaP应变量子阱激光器

报道了无铝InGaAs/GaAs/InGaP应变量子阱激光器，其特征温度高达170 K。具有InGaAsP过渡层的as-cleaved激光器的内部量子效率为87%，内部波导损耗为6.33 cm/sup -1/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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