A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm
{"title":"离子注入可饱和吸收区的InGaAsP/InP激光二极管被动锁模产生1.535 /spl mu/m高重复频率亚皮秒脉冲","authors":"A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm","doi":"10.1109/ISLC.1994.519157","DOIUrl":null,"url":null,"abstract":"Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation\",\"authors\":\"A. G. Deryagin, D. Kuksenkov, V. Kuchinskii, E. L. Portnoi, I. Khrushchev, J. Frahm\",\"doi\":\"10.1109/ISLC.1994.519157\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519157\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation
Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.
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