High T/sub 0/ 1.3 /spl mu/m InGaAs strained single quantum well laser with InGaP wide band-gap clad layers

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518901

H. Kurakake, T. Uchida, K. Kubota, S. Ogita, H. Soda, S. Yamasaki

引用次数: 1

Abstract

1.3 /spl mu/m laser simulation taking hot carriers into account indicated the effectiveness of wide band-gap clad layers for improving laser performance. Lasers fabricated with InGaP cladding layers based on these calculations exhibited the high T/sub 0/ of 100 K.

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高T/sub 0/ 1.3 /spl mu/m InGaAs应变单量子阱激光器

考虑热载流子的1.3 /spl mu/m激光模拟表明了宽带隙复层对提高激光性能的有效性。基于这些计算，用InGaP包层制备的激光器显示出100 K的高T/sub /。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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