用于研究应变效应和GaInP超晶格有序的交叉耦合腔激光器(XCCL)

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519165

F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn

{"title":"用于研究应变效应和GaInP超晶格有序的交叉耦合腔激光器(XCCL)","authors":"F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn","doi":"10.1109/ISLC.1994.519165","DOIUrl":null,"url":null,"abstract":"Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering\",\"authors\":\"F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn\",\"doi\":\"10.1109/ISLC.1994.519165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

只提供摘要形式。具有cupt型超晶格的GaInP激光器在激光发射极化过程中表现出一种各向异性。这种效应可以用方向相关的过渡矩阵元素来理解。XCCL装置用于测试各向异性。

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GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering

Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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